Parasitics such as wirebond inductances and bond pad capacitances that result from hybrid opto-electronic integration pose a challenge towards achieving data rates beyond 50 Gb/s. The effect of bond pad capacitance on the receiver transimpedance limit is shown, which demonstrates the significant advantage of monolithic versus hybrid integration. An analysis of three receiver topologies is presented. These all employ the same Cherry-Hooper voltage amplifier for the core electronics. A comparison across several design metrics of the three Transimpedance amplifier (TIA) variants is then provided. The TIAs are implemented monolithically in the IHP 250-nm SiGe BiCMOS EPIC process (fT = 190 GHz). Measurement results are then presented for 50 Gb/s OOK. PAM4 simulations are also shown.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.