We report a development of a bent crystal for use of X-ray polarimeter. A Si(100) crystal sheet was deposited
with DLC (Diamond-Like Carbon) and bent by the difference in the internal stress between the DLC and Si. An
angular reflectivity of the crystal was measured at 8 keV (Cu-Kα). The center of the reflection peak appeared
at the Bragg angle expected for the (400) plane of Si(100). With the bending of the crystal, the angular width
of the peak is broadened. A sample indicated the angular width of 2 degree, which is equivalent to the energy
width of 0.5 keV. The modulation factor was measured to be more than 0.9 for 8 keV energy emission. If the
energy of the X-ray emission is at Fe-K lines (~7 keV), which are very important for X-ray astronomy, the Bragg
angle becomes more close to 45 degree. It means that higher sensitivity for the polarization would be expected
for these lines. The sensitivity in wide energy band with the high modulation factor indicates that the bent
crystal can be a new tool for the X-ray polarimeter. A preliminary design of the polarimetric optics composed
by the Si(100) crystal and a small-size detector (e.g. X-ray CCD camera) is proposed. For celestial objects with
large spatial extent with large emitting energy band, our optics could collect X-rays much more efficiently than
existing optics with high signal to noise ratio. Any kind of crystals can be bent with our method, and then a
combination of different crystals will further improve the performance of the polarimetric optics.
We report a deep-UV microscope having the best resolution of any optical microscope. The resolution limit is less than 0.1 micron, which is close to the resolution limit of a scanning electron microscope (SEM). Moreover, measurement without vacuum chamber is possible using the new deep-UV microscope. The deep-UV microscope is suitable for inspecting semiconductors, magnetic heads and optical disks.
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