In a period where industry strongly struggles to find a cost effective alternative solution to the 193nm double patterning
strategy, resist manufacturers actively started to design new resist platforms for the future lithography candidates such as
EUV or multi-beam. Chemically amplified resists proved their efficiency until now to reach resolution requirements and
simultaneously keeping sensitivity target. Below 20nm, edge roughness starts to play an important role on patterning
quality and critical dimension control. Simultaneously non CAR resist are showing attracting resolution progress with
reasonable sensitivity levels. In the frame of the multi-beam program IMAGINE, performances of advanced resist
platforms have been evaluated at various accelerating voltage: 5kV on the MAPPER multi-beam platform and at 100kV
on a VISTEC Gaussian tool. This paper reports on the comparison results obtained on those two types of chemistry
schemes in terms of resolution, sensitivity and roughness.
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