Single-frequency laser sources serve as a backbone for quantum computing and metrology technologies and applications. Availability of integrated laser systems delivering tailored multiwavelength emission across optical spectrum is a defining factor for further quantum technologies development and commercialization. Modulight demonstrates highly integrated ML6600 laser system for cooling and repumping of 87Rb atoms at D2 line. Such laser system incorporates driving electronics, internal spectroscopy-locked reference laser source, heterodyne detection coupled with frequency stabilization and tuning functionalities of outputs. In-house semiconductor engineering and fabrication of DBR, DFB and external cavity lasers allows ML6600 system to cover wavelength ranges from UV to IR.
Hyperscale datacenters are driving the growth of datacom laser diode market. Small wavelength drift over temperature, small footprint and low power consumption makes directly modulated distributed feedback (DFB) lasers ideal for uncooled operation in intra-datacenter interconnects. DFB lasers require significantly less process steps than electroabsorption modulated lasers (EMLs), used typically for higher speeds and longer distances. AlGaInAs-based lasers are exceptionally desirable for uncooled operation compared to InGaAsP because of the material’s better electron confinement, resulting in better power conversion in high temperature operation, higher possible operation frequency and more stable operation in AlGaInAs based lasers. Directly modulated DFB lasers must be operated with relatively high bias current to achieve the desired bandwidth. This together with the absence of active cooling raises a reliability concern. Modulight has already demonstrated a very stable 10 Gb/s device operating in O-band with predicted median lifetime of 180 years at 85°C2. Using similar epitaxial design, 25 Gb/s operation is already possible. DFBs can be further optimized by limiting the device resistance and capacitance by optimizing the doping profile as well as the contact pad. Miniaturization of the laser chip is limited by the dicing process, but the effective device size can be reduced by limiting the active area in the chip.
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