Mr. Patrick Lomtscher Profile

Patrick Lomtscher

at Qoniac GmbH

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Author

Publications (10)

Proceedings Article | 10 April 2024 Poster + Paper

An alternative to M+3S overlay dispositioning metric: number-of-dies-within-spec

Alberto Lopez-Gomez, Stefan Buhl, Eric Jehnes, Patrick Lomtscher, Manuela Gutsch, Xaver Thrun, Clemens Utzny, Philip Groeger, Johannes Kowalewski

Proceedings Volume 12955, 129553T (2024) https://doi.org/10.1117/12.3022117

KEYWORDS: Semiconducting wafers, Overlay metrology, Scanners, Semiconductors, Modeling, Interpolation, High volume manufacturing, Data modeling, Performance modeling, Mixtures

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Proceedings Article | 22 February 2021 Presentation + Paper

Innovative dual mark design for alignment verification and process monitoring in advanced lithography

Jia Hung Chang, En Chuan Lio, Junjin Lin, Tang Chun Weng, Bill Lin, Patrick Lomtscher, Martin Freitag, Stefan Buhl, Hsiao Lin Hsu, Rex Liu

Proceedings Volume 11613, 116130K (2021) https://doi.org/10.1117/12.2583620

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Proceedings Article | 23 March 2020 Paper

Advanced high order field-to-field modeling for wafer edge control

Boris Habets, Stefan Buhl, Wan-Soo Kim, Patrick Lomtscher, Holger Bald, Tobias Hoeer

Proceedings Volume 11327, 113270U (2020) https://doi.org/10.1117/12.2552714

KEYWORDS: Semiconducting wafers, Data modeling, Performance modeling, Overlay metrology, Computer simulations, Data corrections, Metrology, Statistical modeling, Neodymium, Statistical analysis

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Proceedings Article | 20 March 2020 Paper

High-order field distortion correction using standalone alignment technology with modeling and sampling optimization

Takehisa Yahiro, Katsushi Makino, Haruki Saito, Steven Tottewitz, Boris Habets, Patrick Lomtscher, Jiro Hanaue

Proceedings Volume 11325, 113251Y (2020) https://doi.org/10.1117/12.2551603

KEYWORDS: Distortion, Semiconducting wafers, Optical alignment, Optimization (mathematics), Scanners, Overlay metrology, Process control, Reticles, Data modeling

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Proceedings Article | 26 March 2019 Paper

Overlay run-to-run control based on device structure measured overlay in DRAM HVM

Hsiao Lun Chu, Foster Huang, Steven Tottewitz, Boris Habets, Patrick Lomtscher, Hsiao-Lin Hsu, Afu Chiu, Rex Liu

Proceedings Volume 10959, 109592P (2019) https://doi.org/10.1117/12.2515203

KEYWORDS: Overlay metrology, Etching, Device simulation, Feedback control, Lithography, Measurement devices, Semiconducting wafers, Control systems, High volume manufacturing, Inspection

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In leading edge lithography, overlay is usually controlled by feedback based on measurements on overlay targets, which are located between the dies. These measurements are done directly after developing the wafer. However, it is well-known that the measurement on the overlay marks does not always represent the actual device overlay correctly. This can be due to different factors, including mask writing errors, target-to-device differences and non-litho processing effects, for instance by the etch process.¹

In order to verify these differences, overlay measurements are regularly done after the final etch process. These post-etch overlay measurements can be performed by using the same overlay targets used in post-litho overlay measurement or other targets. Alternatively, they can be in-device measurements using electron beam measurement tools (for instance CD-SEM). The difference is calculated between the standard post-litho measurement and the post-etch measurement. The calculation result is known as litho-etch overlay bias.

This study focuses on the feasibility of post-etch overlay measurement run-to-run (R2R) feedback instead of post-lithography R2R feedback correction. It is known that the post-litho processes have strong non-linear influences on the in-device overlay signature and, hence, on the final overlay budget. A post-etch based R2R correction is able to mitigate such influences.²

This paper addresses several questions and challenges related to post-etch overlay measurement with respect to R2R feedback control. The behavior of the overlay targets in the scribe-line is compared to the overlay behavior of device structures. The influence of different measurement methodologies (optical image-based overlay vs. electron microscope overlay measurement) was evaluated. Scribe-line standard overlay targets will be measured with electron microscope measurement. In addition, the influence of the intra-field location of the targets on device-to-target shifts was evaluated.

Proceedings Article | 26 March 2019 Paper

Alignment sampling by thorough run-to-run simulation

Alex Ren, Ding Kai, Boris Habets, Steffen Guhlemann, Norman Birnstein, Alexander Mühle, Patrick Lomtscher, Rex Liu

Proceedings Volume 10959, 109592O (2019) https://doi.org/10.1117/12.2515001

KEYWORDS: Optical alignment, Overlay metrology, Semiconducting wafers, Optimization (mathematics), Computer simulations, Data modeling, Semiconductors, Metrology, Manufacturing

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Proceedings Article | 26 March 2019 Paper

Intra-field alignment for overlay feed-forward simulation with sampling optimization

Cheng Hao Yang, Chun Chi Yu, Patrick Lomtscher, Martin Freitag, Steven Tottewitz, Boris Habets, Hsiao Lin Hsu, Rex Liu

Proceedings Volume 10959, 109592T (2019) https://doi.org/10.1117/12.2514984

KEYWORDS: Semiconducting wafers, Optical alignment, Data modeling, Overlay metrology, Data corrections, Visualization, Lithography, Reticles, Optimization (mathematics)

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Proceedings Article | 13 March 2018 Paper

Higher order intra-field alignment for intra-wafer lens and reticle heating control

Charlie Chen, En-Chuan Lio, Hsiao Lin Hsu, Jia Hung Chang, Sho Shen Lee, Patrick Lomtscher, Boris Habets, Georg Erley, Norman Birnstein, Steven Tottewitz, Rex Liu

Proceedings Volume 10585, 105851R (2018) https://doi.org/10.1117/12.2297358

KEYWORDS: Optical alignment, Semiconducting wafers, Reticles, Overlay metrology, Data modeling, Neodymium, HVAC controls, Distortion, Calibration, Roads

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Proceedings Article | 13 March 2018 Paper

Advanced combined overlay and CD uniformity measurement mark for double patterning

Hsiao Lin Hsu, En Chuan Lio, Charlie Chen, Jia Hung Chang, Sho Shen Lee, Stefan Buhl, Manuela Gutsch, Patrick Lomtscher, Martin Freitag, Boris Habets, Rex Liu

Proceedings Volume 10585, 105851H (2018) https://doi.org/10.1117/12.2299299

KEYWORDS: Overlay metrology, Etching, Lithography, Semiconducting wafers, Metrology, Critical dimension metrology, Molybdenum, Information operations, Optical lithography, Double patterning technology

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Proceedings Article | 12 May 2005 Paper

Long-term Zernike lens aberration measurement

Patrick Lomtscher, Gerhard Kunkel, Bill Roberts

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598738

KEYWORDS: Monochromatic aberrations, Semiconducting wafers, Interferometers, Reticles, Projection systems, Lithography, Phase shifts, Metrology, Wavefronts, Diffraction gratings

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Showing 5 of 10 publications

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