Optical thickness monitoring is implemented in almost all coating machines for high precision optical interference filters. Standard broadband transmittance monitoring comes to the limit of thickness resolution when e.g. nanolaminates are deposited. Ellipsometry is more sensitive for material dispersion and interfaces and gives more detailed information on the layers at the beginning of the stack. On the other hand, transmittance measurements can be used for designs with higher layer count with standard materials. In this contribution we show the integration of a broadband ellipsometer for the determination of thickness and material properties during the growing layers in a magnetron sputtering system with a turntable configuration. The ellipsometric angles Psi and Delta were measured at an angle of incidence of 70° and the deposition process was investigated for Ta2O5 and SiO2. The control substrate passes the measurement position every 240 ms. The triggering was optimized to match the exact position on the moving control substrate. In addition, results for nanolaminates are presented from the combination of amorphous silicon and silicon dioxide. The non-reactive magnetron sputtering process with separate oxidation by plasma source gives smooth surfaces even for sub-nm layers as revealed by TEM measurements. The thicknesses are reproducible and in good agreement with ellipsometry.
In broadband dielectric coatings, the wavefront of the reflected wave can change dramatically in a resonance-like manner as a function of wavelength. These wavefront errors can be a significant issue in high precision instruments. In the last years, effort has been undertaken to design and produce coatings to reduce these resonances. However, today there is still limited capability to characterize by measurement the spectral dependence of the wavefront error with high spectral resolution and accuracy. The goal of this paper is to present and analyze a design for a setup to measure the reflected wavefront from a coated flat component with high accuracy as a function of the wavelength. The proposed design is based on a passive system using high-precision off-axis parabolic mirrors. For sensing the wavefront error a Shack-Hartmann sensor is proposed, whose microlens array design is to be modified. According to error analysis and tolerance studies, the setup is capable of measuring wavefront distortion with sub-2 nm RMS accuracy within 510 nm to 950 nm. The angle of incidence and the polarization can also be varied without a loss of accuracy. In order to determine the point spread function (PSF) with high accuracy in addition to the wavefront measurement, the wavefront error of the setup itself needs to be below 50 nm RMS. The tolerancing performed in this study included the light source, shape errors of the mirrors, beam splitter, polarizers, and the sensors. Shape irregularities of the single elements were simulated by Zernike polynomials, and the residual wavefront error of the setup is estimated by Monte Carlo simulations, including uncertainties of the mechanical positioning. From these simulations, specifications for the mirrors have been worked out based on the goal of a system wavefront error lower than 50 nm RMS. The intended broad spectral range makes it challenging to identify a suitable Shack-Hartmann wavefront sensor. Different sensor configurations are evaluated experimentally, and a reproducible wavefront measurement can be achieved by adjusting the focal length of the microlens array. Thereby, the repeatability in wavefront measurements could be reduced from 3 nm to less than 1 nm RMS by modifying the microlens array parameters. Tilting the polarizer and beam splitter by 2° prevents ghost images and multiple reflections in the setup. Finally, considerations about the realization of a suitable reference measurement with an optical flat of sufficient surface quality are presented.
Market drivers for the increasing demand for optical interference coatings on planar substrates and lenses include data communication systems and consumer electronics. Magnetron sputtering can deliver environmentally stable coatings with high throughput. Low defect densities combined with high stability of the process and coating system enable complex optical layer designs with very accurate reproducibility. Cylindrical targets are well known for coatings on large area such as window glass, but are rarely used for coating stacks with high layer counts. With the OPTA X, we are introducing a rotary target-based platform that takes advantage of the long-term stable deposition rate and high material utilization of these sputtering sources. Cylindrical targets have almost no re-deposition zone and no deep racetracks due to rotation. This strongly reduces the potential of particle generating arcs that are caused by surface charges in oxidized target areas. We also use substoichiometric target material sputtered in a pure argon atmosphere without the need for further reactive gas process control. Oxidation is performed by a plasma source in a pressure-separated plasma oxidation zone. The platform can be equipped with sputter sources in a sputter-up or sputter-down configuration or in a combination of both. Interesting applications for double-sided filter coatings include beam splitters for aerospace applications or filter deposition on thin glass substrates to compensate for layer stresses and associated geometric deformations. The elimination of substrate flipping for double-sided coatings also enables shorter production times and offers potential for cost savings.
In this paper, we are presenting preliminary optical properties as well as deposition rates of SiO2 and Nb2O5 oxide films. Furthermore, we are showing results of optical single layers as well as examples of filter coatings prepared by broadband transmittance monitoring and process control.
The internal quantum efficiency (IQE) is a key property of light-emitting semiconductor structures. We critically review the most popular methods for determining the IQE. In particular, we discuss the impact of low- temperature non-radiative recombination on temperature-dependent CW photoluminescence measurements. Using temperature-dependent time-resolved photoluminescence we establish a method to verify 100 % IQE at low temperature and thus to obtain absolute internal quantum efficiencies at all temperatures.
Efficient radiative recombination is one of the key properties enabling high performance light emitting devices. We have performed an in-depth experimental analysis of radiative recombination in polar, nonpolar, and semipolar III-nitride quantum wells (QWs), which allows us to elucidate and quantify its mechanisms. We are able to distinguish between localized and free exciton recombination, we clearly see the effect of polarization fields via the quantum-confined Stark effect, and we observe the effect of the valence band structure associated with crystal orientation and strain.
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