This paper describes the properties of vertical-cavity semiconductor devices designed to emit light when driven in forward bias mode and detect optical radiation at wavelengths longer than that of emission when driven in reverse bias mode. The study of this type of devices is motivated by the miniaturization and integration into a single unit of the three functions that a microfluorimeter has to perform, optical pumping, optical detection, and optical filtering of weak light sources. The devices produced can generate fluorescence with a low output power since their emission wavelength can be tuned with that of maximum absorption of the fluorescent dye. We demonstrate also that they can detect low power fluorescence generated in a small volume of concentrated solution of a commercial dye. These devices can find useful application in microanalytical systems such as microfluidic devices or optical biochips.
We present a novel vertical-cavity semiconductor device capable of generating in forward bias optical radiation to pump fluorescent labeling dyes and detecting their fluorescence emission when operated in reverse bias mode. The integration of a partially coherent light source and a sensitive detector within the same semiconductor wafer is a further step toward the realization of optical biochips for DNA analysis and cytometry. The structure and the criteria chosen to design these devices, their emission and detection properties are presented and discussed in detail.
This paper presents results that have emerged from the European funded ESPRIT Project, Bright Red Surface Emitting Lasers (BREDSELS-23455). The project's main objective has been to develop arrays of Vertical Cavity Surface Emitting Lasers (VCSEL's) emitting in the region of 650 nm. These VCSEL arrays, suitably coupled to plastic fiber ribbon, are potentially ideal sources for high-speed plastic optical fiber networks. Linear 1 X 8 VCSEL arrays have been fabricated from wafers grown in multi-wafer MOVPE reactors. Individual VCSELs are shown to generate a peak room temperature power of 2 mW at 674 nm and are capable of operating continuous wave to a temperature of 60 degrees Celsius. The use of selective oxidation in the fabrication process is found to be essential in terms of providing effective heat sinking to the active region, while free carrier absorption is found to be a significant loss mechanism. A detailed description of the device results including modal behavior is presented along with the initial results from the plastic fiber ribbon module.
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