In this communication, the 3D heterogeneous integration of miniaturized communicating modules used for wireless
network application is described. These communicating objects present the particularity of being in Nano-scale
range. In fact, each object is composed of Nano-sensors, transceivers and E/R antenna. Such investigated ways of
Nano-system integration will allow the development of sensor communicating modules which can be inserted and
located in areas with access difficulty (in particular in non planar area) or even in inaccessible places. This attractive
integration concept is discussed and illustrated here.
The aim of this work was to develop a new MEMS switch structure for millimeter wave applications, which can be
integrated with other more complex devices for developing of reconfigurable filters or antennae for microwave or
millimeter wave frequency range. Electrostatic force was chosen for the switching operation, which seams to be the only way
to obtain high reliable and wafer scale manufacturing techniques at these frequencies. Different geometries of the switching
element were designed and manufactured in order to study the mechanical stability of these structures; the measured actuation
voltage, of about 24,5V, shows an acceptable value for the further applications. Measured and simulated results of these
structures (insertion losses of about 0.75dB@60GHz and isolation >50dB@60GHz) were in good agreement and are
promising for further applications in this frequency range.
The deployment of Wireless Sensors Network for Structure Health Monitoring will allow better
maintenance of the aircraft and predictive diagnosis of the aircrafts in a long term approach. This paper
presents our research on the design of wireless communicating nano-objects for Structure Health
Monitoring in the aircrafts and the improvements bring by the nanotechnologies. The main challenges we
address here are the design of ultra low power communicating circuits to enable high lifetime for the
communicating nodes and their integration on flexible substrate to allow their deployment in difficult
accessible places on the aircraft using conventional technologies. Other main issues are the choice of the
communicating frequency which will allow a high number of communicating nodes in such a small area
like the cabin of an aircraft and the choice of the network architecture.
Comparisons between several pairs of contact materials are done with a new methodology using a commercial nanoindenter coupled with electrical measurements on test vehicles specially designed to investigate microscale contact physics. Experimental measurements are obtained to characterize the response of a 5-µm2-square contact bump under electromechanical stress with increased applied current. The data provide a better understanding of microcontact behavior related to the impact of current at low- to medium-power levels. Contact temperature rise is observed, leading to shifts of the mechanical properties of contact materials and modifications of the contact surface. The stability of the contact resistance, when the contact force increases, is studied for contact pairs of soft (Au/Au contact), harder (Ru/Ru contact), and mixed material configuration (Au/Ru contact). An enhanced stability of the bimetallic contact Au/Ru is demonstrated, considering sensitivity to power increase related to creep effects and topological modifications of the contact surfaces. These results are compared to previous ones and discussed in a theoretical way by considering the temperature distribution around the hottest area at the contact interface.
Comparisons between several pairs of contact materials have been done with a new methodology using a commercial
nanoindenter coupled with electrical measurements on test vehicles specially designed to investigate the micro-scale
contact physics. Experimental measurements are obtained to characterize the response of a 5 μm2 square contact bump
under electromechanical stress with increased applied current. The data provide a better understanding of micro-contact
behaviour related to the impact of current at low- to medium-power levels. Contact temperature rise is observed, leading
to shifts of the mechanical properties of contact materials and modifications of the contact surface. The stability of the
contact resistance, when the contact force increases, is studied for contact pairs of soft (Au/Au contact), harder (Ru/Ru
contact) and mixed material configuration (Au/Ru contact). An enhanced stability of the bimetallic contact Au/Ru is
demonstrated considering sensitivity to power increase, related to creep effects and topological modifications of the
contact surfaces. These results are compared to previous ones and discussed in a theoretical way by considering the
temperature distribution around the hottest area at the contact interface.
KEYWORDS: Microelectromechanical systems, Switches, Bridges, K band, Inductance, Systems modeling, Capacitance, Phase shifts, Radio frequency circuits, Electrodes
In this paper, we present a new approach to RF MEMS shunt switch modeling from K-band up to W-band. The switch model is based on a size parameter that allows to scale the models for different frequencies.
In this paper, capacitive RF-MEMS switches topologies are investigated regarding their power handling
capabilities. The topologies differ from the ability to handle thermal stress by an optimization of their anchorage arms.
A specific meander arms design leads in fact to enhance by a decade the flexibility regarding their thermal expansion.
To evaluate the proposed RF-MEMS morphology, a specific thermal stress protocol has been defined and applied from
20°C up to 120°C. The monitoring of air gap, actuation voltage and insertion losses has been performed after each
thermal stress in order to check the impact of the temperature on working switch. The main result indicates that a
different thermal behavior depending on the MEMS anchorage arms morphology has been obtained.
In recent years for the fabrication of millimetre wave circuits, the removal of the substrate has been proposed as a
solution for the reduction of losses, especially for silicon substrates. However, the micromachining of GaAs is an
exciting less explored alternative for manufacturing high performance communication systems. GaAs micromachining is
very interesting for the millimeter and submillimeter wave applications, due to the potential for easy monolithic
integration of passive circuit elements with active devices manufactured on the same chip.
This paper presents the monolithic integration of a two-director membrane supported Yagi-Uda antenna with a Schottky
diode, both having as support a 2 μm thick GaAs membrane. The design was based on the full-wave electromagnetic simulation software Zeland-IE3D. The following Molecular Beam Epitaxy (MBE) structure was grown on a
semiinsulating GaAs wafer: 0.2 μm thin AlxGa1-x As layer with x > 0.55 (the etch-stop layer) followed by a 2 μm Low
Temperature (LT) GaAs layer ("the membrane layer") and then by a 0.3 μm thin GaAs, (1x1018 cm-3-"ohmic layer").
Finally a 0.3 μm thin GaAs (1x1017 cm-3-"Schottky layer") was grown. An eight-mask process was developed for the
receiver manufacturing. The process includes some difficult steps regarding the integration of a very small Schottky
diode (with a diameter of about 3 μm) with the antenna with dimensions of a few millimeters, the polyimide-bridge
manufacturing, and the membrane formation using Reactive Ion Etching (RIE). The receiver characterization, including
the isotropic voltage sensitivity, was performed using "on wafer" measurements and has shown a good agreement with
the simulated results. High performance receiver circuits for operating frequency of 45 GHz have been demonstrated.
The technology developed can be used for applications up to THz.
Miniaturization, low cost and excellent performances at microwave and millimeterwave applications represent the main leitmotivs of the future mass market communication systems. Consequently, a novel "MEMS above IC" technology has developed in order to allow the elaboration of post-processed micro-machined passive components on top of SiGe circuits to realize a complete short-range communication receiver centered at 24 GHz.
The developed technology is based on the use of : -a thick organic layer (BCB), which is employed as a dielectric membrane,
-metallizations to realize the passive metal layer and also the vias to interconnect the active circuits with the post-processed passive components, -and a bulk silicon micromachining.
This 'above IC' technology presents many advantages, as it uses conventional equipments of microelectronics and is in adequation with high frequency applications. A specific attention has been carried out in order to assure the compatibility of the post-process steps and the IC’s. This has been performed through the choice of the adequate technological steps, which had to present a low temperature budget. The compatibility of each step has been evaluated with a specific test protocol on SiGe transistors. It implies static and dynamic characterisation of these transistors as well as low frequency noise measurements. Each step has been validated, even the bulk silicon micromachining. Design rules have thus been defined in order to localize the silicon etching without any damage on the ICs.
We present an original RF-MEMS switch topology associated with an efficient design methodology. The proposed switch has been optimized thank to a scalable electrical model, fabricated and measured and exhibits isolations better than -23 dB and losses less than 0.25 dB at 24 GHz for a pull down voltage of 22V. The proposed topology and design methodology can then be efficiently used to optimize more complex RF-MEMS with enhanced microwave performances.
Patrick Pons, David Dubuc, Federic Flourens, Mohammad Saddaoui, Samuel Melle, Alex Tackacs, Junwu Tao, Herve Aubert, Ali Boukabache, T. Paillot, Pierre Blondy, Olivier Vendier, Katia Grenier, Robert Plana
This paper reports on the investigation of the potentialities of the MEMS technologies to develop innovative microsystem for millimetre wave communication essentially for space applications. One main issue deals with the robustness and the reliability of the equipment as it may difficult to replace or to repair them when a satellite has been
launched. One solution deals with the development of redundancy rings that are making the front end more robust. Usually, the architecture of such system involves waveguide or diode technologies, which present severe limitations in term of weight, volume and insertion loss. The concept considered in this paper is to replace some key elements of such system by MEMS based devices (Micromachined transmission lines, switches) in order to optimize both the weight and
the microwave performance of the module. A specific technological process has been developed consisting in the fabrication of the devices on a dielectric membrane on air suspended in order to improve the insertion loss and the isolation. To prove the concept, building
blocks have been already fabricated and measured (i.e micromachined transmission and filter featuring very low insertion loss, single pole double through circuits to address the appropriate path of the redundancy ring). We have to outline that MEMS technology have allowed a simplification of the architecture and a different system partitioning which gives more degree of freedom for the system designer. Furthermore, it has been conducted an exhaustive
reliability study in order to identify the failure mechanisms. Again, from the results obtained, we have proposed an original topology for the SPDT circuit that takes into account the reliability behaviour of the MEMS devices and that allow to prevent most of the failure mechanisms reported so far (mainly related to the dielectric charging effect). Finally, the active device (millimetre wave low noise amplifier) will be reported on the MEMS based chip using flip
chip technology to integrate the Microsystem.
In this paper, we report low frequency noise (LFN) data obtained on passivated AlGaN/GaN HEMT’s grown by MBE on a silicon substrate. In order to localize the LFN sources, we have measured all the extrinsic gate and drain current noise generators and their coherence versus bias in the linear regime. We have found that the gate noise sources result from leakage phenomena at gate-source and gate-drain regions. Drain noise sources are mostly located in the active channel below the gate and they feature an equivalent Hooge coefficient of about 10-3. Secondly, in order to build a LFN model that fits the requirements of a CAD simulator, we have measured the LFN sources for numerous bias points in the saturation region and therefore we have studied the bias dependence of the different noise sources under normal operating conditions. Results show that the gate terminal noise current impacts heavily the overall LFN of the transistor contrary to others III-V HEMTs, and that specific bias conditions are needed in order to reduce the LFN.
AlGaN/GaN HEMTs are promising devices not only for high frequency power amplification but also for non-linear applications such as VCO. Therefore an assessment of their low frequency noise (LFN) is needed since it can be up-converted around the RF carrier. We have therefore compared different devices either made on sapphire or silicon in order to know which ones feature the lowest LFN. This study involves static and low frequency noise measurements (two different LFN set-up will be used and compared). GaN HEMT devices featuring several gate dimensions have been measured for different biasing conditions both in ohmic and saturation regime. We have compared sapphire based devices with silicon based ones with respect to their LFN levels.
In a second part of this work, we report on some reliability results of HEMT on sapphire substrates: identification of defects has been achieved with the help of static measurements, and we make use of low frequency noise as well as physical simulation in order to understand the operating mode of the device. For the first time, we correlate the γ of the 1/fγ LFN spectrum with transport mechanisms of the carriers: we found that γ strongly depends on the carriers conduction path. This hypothesis has been checked for HEMT on silicon substrate.
Because of their interesting electrical, mechanical and thermal properties at high frequencies, polymers are becoming more and more attractive in the development of RF and millimeterwave applications. Their process ease and characteristics indeed permit improvement in the performance of passive components as well as their integration especially with active devices. Investigated in this paper are a few technological solutions based on the use of thick polymer layers. The first one consists of a thick organic layer that may be employed as a dielectric membrane on bulk silicon micromachined substrates in order to realize suspended components, which exhibit thus very low losses and dispersion on a large frequency range. The elevation of passive circuits through thick polymers represents another attractive solution to minimize the losses induced by the silicon substrate, which through a low thermal budge provides a particularly attractive method for post-processing over active devices. The use of polymers for additional surface micromachining into coplanar slots on silicon substrates can also improve both losses and quality factor. Finally, an application using a thin polymer layer as dielectric protection for a MEMS device is described.
This paper presents the design, fabrication and measurement of membrane supported double-folded slot coplanar waveguide (CPW) feed antenna structures. The central operating frequency for the two antennas are 77 GHz and 94 GHz. The antennas were fabricated on 1.5 micrometers thick SiO2/Si3N4 dielectric membranes micromachined from a 350 micrometers thick high resistivity silicon substrate. The design was based on electromagnetic simulations using Zeland IE3D software package and a circuital approach for modeling the CPW feed lines. The experimental results show a return loss of -24.35 dB at 74.5 GHz for the 77 GHz antenna structure and -27.5 dB at 92.85 GHz for the 94 GHz antenna structure. The agreement between the frequency dependence of the return loss of the experimental and simulated results is very good. These results will be used in the design and fabrication of micromachined microsystems front-ends as millimeter wave transmitters and receivers.
This paper presents a new silicon technology that is used for innovative components such as a MicroElectroMechanical Systems for microwave and millimeter-wave applications. This technology is based on two different bulk and surface silicon micro- machining processes. The former one, the bulk micro-machining, is well fitted to the realization of low loss microwave circuits suspended on a thin membrane, whereas the surface one allows the realization of actuable devices. This confers to the structure an interesting MEM behavior particularly important in millimeter- wave applications. As a demonstration of the advantage of combining surface and bulk micromachining a low loss (< 0.1 dB at 100 GHz), high isolation (approximately equals 30 dB at 10 GHz) capacitive switch has been designed, processed and measured. A distributed switch with enhanced performance has also been investigated.
A new fully silicon MEM technology and design methodology is introduced to realize millimeter-wave applications such as switches. It is based on two kinds of micro-machining techniques: a bulk micro-machines used to realize micro-wave circuits on a suspended membrane in order to decrease losses, and a surface micro-machining to make air-bridges actuable by electrostatic force. A MEM bridge electrical model has been investigated and implemented in the design of distributed switches.
This paper deals with an original approach for the design and realization of high performance micromachined millimeter wave passive circuits on silicon. Full wave finite element 3D and 2D simulations techniques has been done to design the structures. First, because of the silicon anisotropic properties, we have designed a low loss tapered transition between the 50 (Omega) silicon input/output lines and the micromachined circuit. In order to minimize ohmic losses, new technological processes have been implemented. A 6 mm length micromachined coplanar transmission line, embedded between two tapers and probe pads, and featuring an overall insertion loss of less than 0.8 dB at up to 67 GHz has been achieved. From this technology, we have realized a high quality factor cavity in the 35 GHz range through an appropriate coupling between a micromachined coplanar line and a dielectric resonator acting on it whispering gallery modes. This original structure features a loaded Q of about 2000.
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