Dr. Rolf Custers Profile

Dr. Rolf Custers

at ASML Netherlands BV

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Author

Publications (9)

Proceedings Article | 4 May 2020 Presentation + Paper

Progress in EUV resists status towards high-NA EUV lithography

Xiaolong Wang, Li-Ting Tseng, Timothee Allenet, Iacopo Mochi, Michaela Vockenhuber, Chia-Kai Yeh, Lidia van Lent-Protasova, Jara Garcia Santaclara, Rolf Custers, Yasin Ekinci

Proceedings Volume 11323, 113230C (2020) https://doi.org/10.1117/12.2551886

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Scanning electron microscopy, Fourier transforms, Diffraction gratings, Printing, Lithography, Electroluminescence, Optical lithography

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Proceedings Article | 9 October 2019 Presentation + Paper

Progress overview of EUV resists status towards high-NA EUV lithography

Xiaolong Wang, Li-Ting Tseng, Iacopo Mochi, Michaela Vockenhuber, Lidia van Lent-Protasova, Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, Yasin Ekinci

Proceedings Volume 11147, 1114711 (2019) https://doi.org/10.1117/12.2536923

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Diffraction gratings, Scanning electron microscopy, Printing, Photomasks, Lithography

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Proceedings Article | 29 August 2019 Paper

Progress in EUV resists for contact holes printing using EUV interference lithography

Xiaolong Wang, Li-Ting Tseng, Iacopo Mochi, Michaela Vockenhuber , Lidia van Lent-Protasova, Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, Yasin Ekinci

Proceedings Volume 11177, 111770U (2019) https://doi.org/10.1117/12.2535678

KEYWORDS: Extreme ultraviolet, Printing, Extreme ultraviolet lithography, Lithography, Diffraction gratings, Scanning electron microscopy, Photomasks, Line edge roughness, Light sources

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Proceedings Article | 29 May 2019 Presentation + Paper

Progress in EUV resists towards high-NA EUV lithography

Xiaolong Wang, Zuhal Tasdemir, Iacopo Mochi, Michaela Vockenhuber, Lidia van Lent-Protasova, Marieke Meeuwissen, Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, Yasin Ekinci

Proceedings Volume 10957, 109570A (2019) https://doi.org/10.1117/12.2516260

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Diffraction gratings, Scanning electron microscopy, Lithography, Electroluminescence, Critical dimension metrology, Optical lithography, Semiconductors

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Proceedings Article | 26 October 2018 Paper

Evaluation of EUV resists for 5nm technology node and beyond

Zuhal Tasdemir, Xiaolong Wang, Iacopo Mochi, Lidia van Lent-Protasova, Marieke Meeuwissen , Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, Yasin Ekinci

Proceedings Volume 10809, 108090L (2018) https://doi.org/10.1117/12.2502688

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Optical lithography, Photomasks, Diffraction gratings, Semiconductor manufacturing, High volume manufacturing, Lithography, Light sources, Laser sintering

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Proceedings Article | 27 March 2018 Paper

Chemically amplified EUV resists approaching 11nm half-pitch

Zuhal Tasdemir, Michaela Vockenhuber , Iacopo Mochi, Karen Garrido Olvera, Marieke Meeuwissen, Oktay Yildirim, Rik Hoefnagels, Gijsbert Rispens, Rolf Custers, Yasin Ekinci

Proceedings Volume 10583, 105831W (2018) https://doi.org/10.1117/12.2299643

KEYWORDS: Scanners, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Diffraction, Optical lithography, Nanoimprint lithography, Diffraction gratings, Photomasks, Semiconducting wafers

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Proceedings Article | 16 October 2017 Paper

Contrast matching of line gratings obtained with NXE3XXX and EUV- interference lithography

Zuhal Tasdemir, Iacopo Mochi, Karen Garrido Olvera, Marieke Meeuwissen, Oktay Yildirim, Rolf Custers, Rik Hoefnagels, Gijsbert Rispens, Roberto Fallica, Michaela Vockenhuber , Yasin Ekinci

Proceedings Volume 10450, 104501T (2017) https://doi.org/10.1117/12.2280541

KEYWORDS: Nanoimprint lithography, Scanners, Extreme ultraviolet lithography, Lithography, Semiconducting wafers, Diffraction gratings, Extreme ultraviolet, Photomasks, Diffraction, Silicon

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Extreme UV lithography (EUVL) has gained considerable attention for several decades as a potential technology for the semiconductor industry and it is now close to being adopted in high-volume manufacturing. At Paul Scherrer Institute (PSI), we have focused our attention on EUV resist performance issues by testing available high-performance EUV resists in the framework of a joint collaboration with ASML. For this purpose, we use the grating-based EUV-IL setup installed at the Swiss Light Source (SLS) at PSI, in which a coherent beam with 13.5 nm wavelength is used to produce a periodic aerial image with virtually 100% contrast and large depth of focus. Interference lithography is a relatively simple technique and it does not require many optical components, therefore the unintended flare is minimized and the aerial image is well-defined sinusoidal pattern. For the collaborative work between PSI and ASML, exposures are being performed on the EUV-IL exposure tool at PSI. For better quantitative comparison to the NXE scanner results, it is targeted to determine the actual NILS of the EUV-IL exposure tool at PSI. Ultimately, any resist-related metrology must be aligned and compared with the performance of EUV scanners. Moreover, EUV-IL is a powerful method for evaluating the resist performance and a resist which performs well with EUV-IL, shows, in general, also good performance with NXE scanners. However, a quantitative prediction of the performance based on EUV-IL measurements has not been possible due to the differences in aerial image formation. In this work, we aim to study the performance of EUV resists with different aerial images. For this purpose, after the real interference pattern exposure, we overlay a flat field exposure to emulate different levels of contrast. Finally, the results are compared with data obtained from EUV scanner. This study will enable not only match the data obtained from EUV- IL at PSI with the performance of NXE scanners, but also a better understanding of resist fundamentals by studying the effects of the aerial image on resist performance by changing the aerial image contrast in a controlled manner using EUV-IL.

Proceedings Article | 27 March 2017 Presentation + Paper

State-of-the-art EUV materials and processes for the 7nm node and beyond

Elizabeth Buitrago, Marieke Meeuwissen, Oktay Yildirim, Rolf Custers, Rik Hoefnagels, Gijsbert Rispens, Michaela Vockenhuber, Iacopo Mochi, Roberto Fallica, Zuhal Tasdemir, Yasin Ekinci

Proceedings Volume 10143, 101430T (2017) https://doi.org/10.1117/12.2260153

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Scanning electron microscopy, Photomasks, Electroluminescence, Printing, Line edge roughness, Semiconducting wafers

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Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) being the most likely candidate to manufacture electronic devices for future technology nodes is to be introduced in high volume manufacturing (HVM) at the 7 nm logic node, at least at critical lithography levels. With this impending introduction, it is clear that excellent resist performance at ultra-high printing resolutions (below 20 nm line/space L/S) is ever more pressing. Nonetheless, EUVL has faced many technical challenges towards this paradigm shift to a new lithography wavelength platform. Since the inception of chemically amplified resists (CARs) they have been the base upon which state-of-the art photoresist technology has been developed from. Resist performance as measured in terms of printing resolution (R), line edge roughness (LER), sensitivity (D or exposure dose) and exposure latitude (EL) needs to be improved but there are well known trade-off relationships (LRS trade-off) among these parameters for CARs that hamper their simultaneous enhancement. Here, we present some of the most promising EUVL materials tested by EUV interference lithography (EUV-IL) with the aim of resolving features down to 11 nm half-pitch (HP), while focusing on resist performance at 16 and 13 nm HP as needed for the 7 and 5 nm node, respectively. EUV-IL has enabled the characterization and development of new resist materials before commercial EUV exposure tools become available and is therefore a powerful research and development tool. With EUV-IL, highresolution periodic images can be printed by the interference of two or more spatially coherent beams through a transmission-diffraction grating mask. For this reason, our experiments have been performed by EUV-IL at Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI). Having the opportunity to test hundreds of EUVL materials from vendors and research partners from all over the world, PSI is able to give a global update on some of the most promising materials tested.

Proceedings Article | 24 March 2017 Paper

Impact of acid statistics on EUV local critical dimension uniformity

Jing Jiang, Danilo De Simone, Oktay Yildirim , Marieke Meeuwissen, Rik Hoefnagels, Gijsbert Rispens, Paul Derks, Rolf Custers

Proceedings Volume 10143, 1014323 (2017) https://doi.org/10.1117/12.2257903

KEYWORDS: Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Diffusion, Quenching (fluorescence), Statistical modeling, Stochastic processes, Critical dimension metrology, Neodymium, Data modeling, Photomasks, Chemical analysis

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