In this paper, we suggest an optimal attenuated phase shift mask (PSM) structure for extreme ultra violet lithography
(EUVL) to minimize mask shadowing effect without loss of image contrast. The attenuated PSM proposed in this study
is based on Fabry-Perot structure that consists of tantalum nitride (TaN) attenuator, Al2O3 spacer, and molybdenum (Mo)
phase shifter. Deep ultra violet (DUV) reflectivity can be lowered down to 5% at 257nm for higher efficiency in DUV
inspection process through the optimal thickness combination of TaN and Al2O3. Since the thickness variation of Mo
dose not affect the DUV reflectivity, the phase shift effect can be controlled by Mo thickness only. As a result,
attenuated PSM with phase shift of 180±6° and absorber reflectivity of 9.5% could be obtained. The total thickness of
absorber stack is only 52nm. The analysis of aerial image was performed using SOLID-EUV simulation tool. The
attenuated PSM showed steeper edge profile and higher image contrast compared to binary mask. Imaging properties
including horizontal-vertical (H-V) critical dimension (CD) bias and pattern shift depending on both pattern size and
process condition were compared to the binary mask using aerial image simulation. Attenuated PSM showed less H-V
CD bias compared to that of binary mask. The 32nm dense pattern shows larger H-V CD bias than 45nm one due to
larger shadowing of smaller pattern size. Especially, 32nm dense pattern at binary mask has very large H-V CD bias. The
H-V CD bias was also affected by the change of focus. However, the H-V bias variation with defocus was below 1nm
within the process latitude. We also obtained the result that the pattern shift is less sensitive than H-V CD bias with the
optical property of absorber in EUVL.
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