Mr. Sanowar Alam Gazi Profile

Sanowar Alam Gazi

at Indian Institute of Technology Bombay

SPIE Involvement:

Author

Area of Expertise:

Quantum Dot infrared photodetector , Molecular Beam Epitaxy , Solid State Devices , Optoelectronics

Publications (17)

Proceedings Article | 1 August 2021 Poster + Presentation + Paper

Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations

Suryansh Dongre, Debiprasad Panda, Debabrata Das, SanowarAlam Gazi, Ravindra Kumar, Mahitosh Biswas, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11802, 118020W (2021) https://doi.org/10.1117/12.2594397

KEYWORDS: Heterojunctions, Indium arsenide, Short wave infrared radiation, Gallium arsenide, Photodetectors, Luminescence, 3D modeling

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Proceedings Article | 18 April 2021 Presentation + Paper

Optical and structural investigation of multilayer InAs SK QDs with In0.15Ga0.85As strain-reducing layer electronically coupled to SML QDs grown by molecular beam epitaxy

Raveesh Gourishetty, Debi Prasad Panda, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11771, 117710T (2021) https://doi.org/10.1117/12.2589251

KEYWORDS: Indium arsenide, Molecular beam epitaxy, Gallium arsenide, Crystals, X-ray diffraction, Quantum electronics, Quantum dots, Optoelectronic devices, Luminescence, Indium

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The effect of thin In0.15Ga0.85As strain-reducing layer on the structural and optical characteristics of multilayer InAs/In(Ga)As Stranski-Krastanov (SK) quantum dots (QDs) electronically coupled to Sub monolayer (SML) QDs has been investigated. The capping of In_0.15Ga_0.85As material over the InAs SK QDs reduces the out-diffusion of Indium atoms from the InAs dot resulting in an increased QD size. Moreover, the In_0.15Ga_0.85As material has a lattice constant between that of InAs and GaAs that aids in undulated transition of strain from the dot to the capping material and the GaAs spacer helping the growth of multilayer QD structure with high crystalline quality. Five different heterostructures are used in this study by varying the number of SK QD layers i.e., single layer (x1), bi layer (x2), penta layer (x5), hepta layer (x7) and deca layer (x10) which are grown on the same six stack SML QDs. A growth strategy has been employed while growing these multilayer SK QDs such that similar size QDs are grown even for deca layer structure with superior dot size homogeneity. The emission full width at half maxima computed at a temperature of 19 K came out to be ~50 nm for the penta layer structure indicating formation of uniform size QDs. The SK and SML QD sizes are chosen such that the ground eigen state of SML QDs coincide with excited states of SK QDs allowing the possibility of carriers to tunnel from the SML to SK QDs. The use of In0.15Ga0.85As capping led to a red shift in the PL peak position as compared to the structure without In0.15Ga0.85As capping. High-Resolution X-Ray Diffraction (HRXRD) measurements are carried out on these structures to understand the structural characteristics of multilayer SK on SML structures. The HRXRD results show that the hepta layer and the deca layer structures have the minimum strain with best crystalline quality. Considering both the optical and the structural characteristics, it has been concluded that the growth strategy helps in growing similar size QDs for the multilayer structures which can be used in various optoelectronic device applications.

Proceedings Article | 21 August 2020 Poster + Paper

A novel heterostructure with multilayer Stranski-Krastanov QDs heterogeneously coupled to Submonolayer QDs for enhanced optical and material characteristics

Raveesh Gourishetty, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651H (2020) https://doi.org/10.1117/12.2569022

KEYWORDS: Heterojunctions, Luminescence, Quantum dots, Gallium arsenide

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Proceedings Article | 21 August 2020 Poster + Paper

Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651C (2020) https://doi.org/10.1117/12.2568847

KEYWORDS: Indium arsenide, Quantum dots, Gallium arsenide, Atomic force microscopy, Heterojunctions, Luminescence, Sensors

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Proceedings Article | 21 August 2020 Poster + Paper

Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory

Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Raveesh Gourishetty, Subhananda Chakrabarti

Proceedings Volume 11465, 114651A (2020) https://doi.org/10.1117/12.2568820

KEYWORDS: Indium arsenide, Gallium arsenide, Interfaces, Quantum dots, Indium gallium arsenide, Heterojunctions, Luminescence

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Proceedings Article | 1 April 2020 Presentation + Paper

Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures

Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452W (2020) https://doi.org/10.1117/12.2555864

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Optical properties, Indium, Arsenic, Interfaces

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Proceedings Article | 1 April 2020 Presentation + Paper

Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer

Ravinder Kumar , Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11345, 113452V (2020) https://doi.org/10.1117/12.2554181

KEYWORDS: Gallium arsenide, Germanium, Indium arsenide, Quantum dots, Silicon, Epitaxy

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Proceedings Article | 1 April 2020 Presentation + Paper

Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers

Saranya Reddy Shriram, Sanowar Alam Gazi, Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452X (2020) https://doi.org/10.1117/12.2555871

KEYWORDS: Gallium arsenide, Heterojunctions, Quantum dots, Optical properties, Raman spectroscopy, Phonons, Indium arsenide, Luminescence, X-ray diffraction

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Proceedings Article | 2 March 2020 Presentation + Paper

Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots

Manas Ranjan Mantri, Debiprasad Panda, Sanowar Alam Gazi, Suryansh Dongre, Subhananda Chakrabarti

Proceedings Volume 11291, 1129105 (2020) https://doi.org/10.1117/12.2547134

KEYWORDS: Indium arsenide, Gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Optical properties, Diffusion, Near infrared, Optoelectronic devices

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Proceedings Article | 2 March 2020 Paper

Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910O (2020) https://doi.org/10.1117/12.2542403

KEYWORDS: Heterojunctions, Indium arsenide, Gallium arsenide, Luminescence, Indium gallium arsenide, Quantum dots, Phonons

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Proceedings Article | 2 March 2020 Paper

Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer

Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Z (2020) https://doi.org/10.1117/12.2546384

KEYWORDS: Silicon, Gallium arsenide, Quantum dots, Indium arsenide, Epitaxy, Germanium

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Proceedings Article | 2 March 2020 Paper

Submonolayer quantum dots in P-i-P configuration: study on effects of monolayer coverage and stacking variations

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Q (2020) https://doi.org/10.1117/12.2542569

KEYWORDS: Heterojunctions, Quantum dots, Indium arsenide, Luminescence, Gallium arsenide, Gallium, Beryllium

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Proceedings Article | 2 March 2020 Paper

Optimization of strain-coupled InAs QD layers in P-i-P infrared photodetector heterostructures

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Abhishek Kumar, Nivedita Pandey, Subhananda Chakrabarti

Proceedings Volume 11291, 112910P (2020) https://doi.org/10.1117/12.2542565

KEYWORDS: Heterojunctions, Indium arsenide, Photodetectors, Luminescence, Infrared radiation, Gallium, Gallium arsenide, Quantum dots

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Proceedings Article | 9 September 2019 Paper

A detailed investigation on the impact of variation in monolayer coverage on optical properties of InAs/GaAs multilayer quantum dot heterostructure

Aditya Patel, Debiprasad Panda, Suryansh Dongre, Sanowar Alam Gazi, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11085, 110851A (2019) https://doi.org/10.1117/12.2529014

KEYWORDS: Indium arsenide, Luminescence, Quantum dots, Gallium arsenide, Heterojunctions, Optical properties, X-ray diffraction

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Proceedings Article | 9 September 2019 Paper

Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots

Abhijeet Aanand, Suryansh Dongre, Sanowar Gazi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 110851D (2019) https://doi.org/10.1117/12.2529049

KEYWORDS: Quantum dots, Heterojunctions, Optical properties, Gallium arsenide, Indium arsenide, Indium, Atomic force microscopy, Luminescence

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Proceedings Article | 9 September 2019 Paper

The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots

Rishabh Dahale, Abhijeet Aanand, Sanowar Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Anubhav Agarwal, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108519 (2019) https://doi.org/10.1117/12.2529006

KEYWORDS: Atomic force microscopy, Optical properties, Indium arsenide, Quantum dots, Gallium arsenide, Heterojunctions, Molecular beam epitaxy

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Proceedings Article | 9 September 2019 Paper

The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

Anubhav Agarwal, Abhijeet Aanand, Sanowar Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Rishabh Dahale, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108518 (2019) https://doi.org/10.1117/12.2528996

KEYWORDS: Quantum dots, Luminescence, Gallium arsenide, Indium, Indium arsenide, Spectroscopy, Nanostructures, Arsenic

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Showing 5 of 17 publications

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