We present recent results on compact GaN based laser sources, primarily designed for cooling and trapping atoms and ions. We show various designs used for miniaturised, direct-generation laser sources in the UV-green part of the spectrum targeting multiple atomic species. We show results from a line narrowed 369nm ECDL for Yb+ cooling, a 397nm frequency stabilised source for Ca+ cooling and a 422nm butterfly packaged ECDL for Sr+ cooling.
We present the fabrication and testing of a prototype high-speed, quad-channel mid-board optics transceiver chipset and module applicable to VCSEL-based intra-satellite optical interconnects. The optical transceiver (OTRx) chipset comprises a VCSEL driver and a TIA integrated circuit (IC) both manufactured in IHP 130 nm SiGe BiCMOS process. The 4-channel OTRx module operates at 850 nm wavelength. It features low power consumption, a small form factor and it is pluggable on the host board through a micro edge card (MEC) connector. We present first functional test results in loop-back configuration at data rates up to 15 Gb/s per channel. The work is performed within the framework of H2020-SPACE-SIPHODIAS project. Additional presentation content can be accessed on the supplemental content page.
Miniaturization of laser sources is crucial to the translation of quantum technologies from the laboratory to the real world. Typically, the lasers required for cooling and trapping of atoms and ions make up a significant footprint of the measurement system. Increasing robustness and reliability whilst removing noise sources is a key challenge whilst reducing volume. Direct generation GaN based external cavity diode lasers offer lower SWaP-C compared to traditional frequency doubled alternatives. Butterfly packaged single frequency sources operation in the blue-UV allow numerous atomic transitions including Sr, Sr+, Yb, Yb+, Mg and Ca to be targeted.
Miniaturisation of laser sources is crucial to the translation of quantum technologies from the laboratory to the real world. Typically, the lasers required for cooling and trapping of atoms and ions make up a significant footprint of the measurement system. Increasing robustness and reliability whilst removing noise sources is a key challenge whilst reducing volume. Direct generation GaN based external cavity diode lasers offer lower SWaP-C compared to traditional frequency doubled alternatives. Butterfly packaged single frequency sources operation in the blue - UV allow numerous atomic transitions including Sr, Sr+, Yt, Yb+, Mg and Ca to be targeted.
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