Controlling and manipulating individual quantum systems underpins the development of scalable quantum technologies. Hexagonal boron nitride (hBN) is emerging as an exceptional platform for applications in quantum photonics. The two-dimensional van der Waals (vdW) crystal hosts single photon emitting defects (quantum emitters) opening new functionality currently inaccessibly with other 3D quantum sources. Due to the two-dimensional nature of the crystal, hBN is an ideal material to integrate into vdW heterostructure devices. These devices have recently been shown to enable electrical modulation of single photon emission. Additionally, the study of the dephasing mechanisms of these sources helps assess the future utilization of hBN emitters in quantum interference experiments.
In this work we couple bright room-temperature single-photon emission from a hexagonal boron nitride atomic defect into a laser-written photonic chip. We perform single photon state manipulation with evanescently coupled waveguides acting as a multiple beam splitter, and generate a superposition state maintaining single photon purity. We demonstrate that such states can be utilized for quantum random number generation.
Quantum optical information systems offer the potential for secure communication and fast quantum computation. To fully characterise a quantum optical system one has to use quantum tomography.1 The integration of quantum optics onto photonic chips provides advantages such as miniaturisation and stability, significantly improving quantum tomography using both re-configurable, and more recently, simpler static designs. These on-chip designs have, so far, only used probabilistic single photon sources. Here we are working towards quantum tomography using a true deterministic source - an InGaAs quantum dot.
Here we present our recent developments in temperature dependent ellipsometry, FTIR and emittance measurements of flat and structured vanadium dioxide (VO2) surfaces allowing significant control of switchable radiative cooling beyond that attainable via traditional VO2 surfaces. VO2 undergoes a metal-insulator transition at a critical temperature of ~ 68°C; previous work has investigated tuning of this critical temperature over a wide range of temperatures. Here we exploit the shift in optical properties to produce surfaces with various emittance temperature profiles that modulate the thermal radiative transfer to/from a surface.
Designing surfaces with different temperature emittance profiles requires accurate optical/thermal characterisation of materials. VO2 is produced by sputtering of vanadium followed by post deposition annealing in a 0.1Torr to 0.3Torr Air atmosphere at 450°C to 550°C, in-situ optical monitoring allows for accurate termination of the annealing process once the desired optical response is achieved.
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