Polyaniline-(PANI)-poly (methyl methacrylate) (PMMA) blend was used to fabricate the Schottky device: Al/ PANI-PMMA /Au. Current density-voltage (J-V) capacitance-voltage (C-V), and complex impedance measurements were used to evaluate the junction parameters of the devices. The photovoltaic parameters of the cells are estimated from the analysis of the current-voltage characteristics under illumination.
A composite of polyaniline (PANI) containing iron oxides (Fe3O4) with nanometer size was prepared by a chemical method. The electrical properties of (PANI-Fe3O4) sandwich structure using ohmic gold and blocking aluminium electrodes were studied. The current density - voltage (J-V) characteristics for the device resemble the typical dark current versus applied voltage characteristic for conventional Schottky diode. Electronic parameters have been calculated using J-V and capacitance-voltage (C-V) measurements.
The electrical and photoelectrical properties of oxygen doped films of nickel phthalocyanine photovoltaic cells have been
studied using ohmic gold and blocking indium electrodes. DC conduction processes identified depend both on the
polarity and on the electric field strength. Under forward bias (gold electrode positive), conductivity is ascribed to
Schottky diode behaviour at lower fields and by space- charge-limited conductivity controlled by an exponential trap
distribution at higher fields. Under reverse bias, the conduction process is interpreted in terms of an electrode-limited to a
bulk limited transition. The photovoltaic parameters of the cells are evaluated from the current-voltage characteristics
under illumination. Space charge concentrations and barrier heights are estimated from the capacitance-voltage
measurements both in dark and under constant illumination. From the action spectra of the photocurrent it is concluded
that the carrier generation process is wavelength independent.
The electrical and photoelectrical properties of oxygen doped films of nickel phthalocyanine photovoltaic cells have been
studied using ohmic gold and blocking indium electrodes. DC conduction processes identified depend both on the
polarity and on the electric field strength. Under forward bias (gold electrode positive), conductivity is ascribed to
Schottky diode behaviour at lower fields and by space- charge-limited conductivity controlled by an exponential trap
distribution at higher fields. Under reverse bias, the conduction process is interpreted in terms of an electrode-limited to a
bulk limited transition. The photovoltaic parameters of the cells are evaluated from the current-voltage characteristics
under illumination. Space charge concentrations and barrier heights are estimated from the capacitance-voltage
measurements both in dark and under constant illumination. From the action spectra of the photocurrent it is concluded
that the carrier generation process is wavelength independent.
Capacitance measurements of oxygen doped films of α or β iron phthalocyanine particles dispersed in a binder polymer polycarbonate (MK), with mixed (Al, Au) electrodes are studied. The capacitance of the cells changes in accordance with the morphological forms. A complete study of the space charge density as a function of temperature is carried out. The results obtained are in accordance with the model proposed for the dopant, oxygen. The low conductivity of the β iron phthalocyanine is due in large part to deep trap carriers presented in this phase.
The electrical and photoelectrical properties of photovoltaic cells, made by dispersing particles of copper phthalocyanine (CuPc) in a binder polymer (polycarbonate MK) and sandwiching between gold nad indium electrodes, have been studied. A complete study of the current as a function of voltage and temperature is carried out. At low voltages, the current in the forward direction varies exponentially with voltage. At higher voltages, two separate regions of ohmic and space charge limited conduction (SCLC) are observed. The latter process is controlled by an exponential distribution of traps above the valence band edge. Analysis of the results enables the determination of the important trapping parameters. Reverse characteristics are interpreted in terms of both the Poole- Frenkel and Schottky effects. Barrier heights and widths are determined as a function of applied voltage. The photovoltaic parameters of the cells are determined from the analysis of the current -voltage characteristics under illumination. Trap density and Schottky barrier built in potential are estimated from capacitance-voltage measurements.
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