Indium Phosphide integrated photonics enables the combination of high-speed lasers and modulators with filters, detectors and multiplexers in one wafer-scale process flow. Low-voltage modulation at rates of 50Gigabit/second and above are feasible with combinations of semi-insulating substrates, optimised multi-quantum wells and high-speed electrical design. Advances in monolithic InP platform technologies have created a mechanism to rapidly introduce such high performance building blocks into sophisticated integration processes, enabling photonic integrated circuits with many tens of active components including distributed feedback lasers, tunable lasers and a range of passsive components. Our recent introduction of 192nm deep UV scanner lithography – believed to be a world first for InP integrated photonics – also enables a step change in the performance for the integrated filters and mode control.
In this paper, we present recent innovations in the creation of high performance transceiver technologies for optical interconnects. We showcase circuits using InP integrated photonics to create high-speed, energy-efficient, optically-multiplexed circuits. Monolithic polarization multiplexing and wavelength domain multiplexing are reviewed where all components, inclusive of the lasers, are created in the same wafer. Line-rates of up to 320 Gb/s are demonstrated for optically multiplexed circuits using a variety of open access fabrication platforms. The challenges and approaches for Terabit/second class transceiver chips will be addressed, addressing crosstalk management, component miniaturisation, and intimate electronic integration.
Fully automated, high precision, cost-effective assembly technology for photonic packages remains one of the main challenges in photonic component manufacturing. Next to the cost aspect the most demanding assembly task for multiport photonic integrated circuits (PICs) is the high-precision (±0.1 μm) alignment and fixing required for optical I/O in InP PICs, even with waveguide spot size conversion. In a European research initiative – PHASTFlex - we develop and investigate an innovative, novel assembly concept, in which the waveguides in a matching TriPleX interposer PIC are released during fabrication to make them movable. After assembly of both chips by flip-chip bonding on a common carrier, TriPleX based actuators and clamping functions position and fix the flexible waveguides with the required accuracy.
A comparative study of two different Photonic Integrated Circuits (PICs) structures for continuous-wave generation of millimeter-wave (MMW) signals is presented, each using a different approach. One approach is optical heterodyning, using an integrated dual-wavelength laser source based on Arrayed Waveguide Grating. The other is based on ModeLocked Laser Diodes (MLLDs). A novel building block -Multimode Interference Reflectors (MIRs) – is used to integrate on-chip both structures, without need of cleaved facets to define the laser cavity. This fact enables us to locate any of these structures at any location within the photonic chip. As will be shown, the MLLD structure provides a simple source for low frequencies. Higher frequencies are easier to achieve by optical heterodyne. Both types of structures have been fabricated on a generic foundry in a commercial MPW PIC technology.
In Europe a number of technology platforms for generic integration are being created for photonic integrated circuits (PICs); in Silicon, in passive dielectrics, and in Indium Phosphide. Such platforms are on the brink of commercialization, they offer a range of calibrated building blocks from which application specific PICs can be built and allow simplified, reduced cost access to a standardised technology, but presently only InP based platforms allow the integration of optical gain blocks; the essential feature of a semiconductor laser. The wavelength is constrained by the platform, usually C-band, but in the near future we expect other wavelengths in the 1.3μm-2.0μm range will be addressed. A frozen platform technology may not seem an ideal starting point for novel laser research but for what may be appear to be lost in epitaxial and process flexibility, much more is gained through a new-found ability to build up complex circuits quickly to deliver new and interesting laser based functionality. Building blocks such as reflectors (a distributed Bragg reflector (DBR) or a multimode interference reflector (MIR)), an amplifier section, and passive waveguides, can be built up by designers into integrated semiconductor lasers of a wide variety of types. This ready integration of novel sources with other circuit functionality can address a wide range of applications in telecoms, datacoms, and fibre based sensing systems. In this paper we describe a number of recent developments on generic InP-based platforms ranging from the fabrication of simple Fabry-Perot lasers, through tuneable DBR lasers, multi-wavelength comb lasers, picosecond pulse lasers and ring lasers.
Laser diodes that emit multiple wavelengths simultaneously are needed in a range of applications including wavelength division multiplexing, high speed optical networks and tera-hertz generation. In this work we report on an integrated approach to obtain multi-wavelength emission from a semiconductor ring laser based on on-chip filtered optical feedback. Semiconductor ring laser have the advantage that they can be easily integrated with other optical components as they do not require mirrors to form the cavity. Moreover, no thermal control of the wavelength emission is needed and therefore the device can be in principle fast. The filtered optical feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. Experimental observations [Khoder et al, Optics. Lett. 38, 2608{2610, 2013] have shown that the effective gain is the key parameter that has to be balanced using the feedback in order to achieve multi-wavelength emission. This can be achieved by tuning the injection current in each amplifier which will change the feedback phase and strength. Numerical simulations using rate equations reproduce the experimental results and show the effects of feedback phase and strength on the multi-wavelength emission.
Semiconductor ring lasers are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. In this work, we characterize the wavelength switching speed of a tunable semiconductor ring lasers using filtered optical feedback. The filtered optical feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback of each wavelength channel independently. The wavelength switching is achieved by changing the currents injected in the semiconductor optical amplifier gates. Experimentally, we observe a wavelength transition time of 5 ns. However, we also noticed a non-negligible delay in the switching process. [ Khoder et al, IEEE Photon. Technol. Lett. 26, 520{523, 2014]. We numerically reproduce the experimental results using rate equations taking into account the effect of spontaneous emission. The simulations further elaborate on the effect of the noise strength on the wavelength transition time and the delay time.
A cost-effective solution to provide higher data rates in wireless communication system is to push carrier wave
frequencies into millimeter wave (MMW) range, where the frequency bands within the E-band and F-band have been
allocated. Photonics is a key technology to generate low phase noise signals, offering methods of generating continuous
MMW with varying performance in terms of frequency bandwidth, tunability, and stability.
Recently, we demonstrated for the first time of our knowledge the generation of a 95-GHz signal by optical heterodyning
of two modes from different channels of a monolithically integrated arrayed waveguide grating multi-wavelength laser
(AWGL). The device uses an arrayed waveguide grating (AWG) as an intra-cavity filter. With up to 16-channel sources
with independent amplifiers and a booster amplifier on the common waveguide, the laser cavity is formed between
cleaved facets of the chip. The two wavelengths required for optical heterodyning are generated activating
simultaneously two channel SOAs and the Boost amplifier.
In this work, we analyze the effect on the dual-wavelength operation of the Boost SOA, which is shared by two
wavelengths. Mapping the optical spectrum, sweeping the two channel and Boost bias currents, we show the interaction
among the different SOAs two find the regions of dual wavelength operation. The size of dual wavelength operation
region depends greatly on the Boost SOA bias level. Initial results of a numerical model of the AWGL will be also
presented, in which a digital filter is used to implement the AWG frequency behavior.
An understanding of parasitic effects is essential to maximize the performance of a Photonic Integrated Circuit (PIC). Using
a circuit simulator, we are able to model mode conversion at the interface between straight and bent waveguides, parasitic
reflections in multi-mode interference couplers (MMIs), interference between multiple modes, residual facet reflections,
and reflections at junctions between components. Even though these effects are usually low in intensity, around -20 dB to
-30 dB from the main signal level, they can still have a strong influence on the circuit performance. This is because the
mentioned parasitic effects are coherent with the desired signal and interference between them is therefore a field effect.
By analyzing three different circuits, and comparing the results to measurements, we show that these effects need to be
carefully managed in order to ensure circuit performance. The circuits we investigate are a Fabry-Perot cavity, a Mach-
Zehnder interferometric structure, and a Michelson interferometer. Especially residual reflections coming from angled
facets and back-reflections in MMIs are shown to be the main parasitic effects in the investigated circuits.
In this paper we discuss the use and implementation of on-chip filtered optical feedback in order to tune the emission
wavelength of a semiconductor ring laser. In this device, a directional coupler is used to couple part of the light emitted
by the laser to a feedback section integrated on the same chip. The feedback section contains two arrayed waveguide
gratings and a set of semiconductor optical amplifiers to provide filtering of particular longitudinal modes sustained by
the ring cavity. Each of the two counter-propagating modes supported by the ring laser is coupled back into the same
direction after filtering in the feedback section. We show that, for appropriate currents injected into the semiconductor
optical amplifiers, the emission wavelength can be tuned and that single mode operation in both directions is achieved.
We use a rate equation model in order to demonstrate tuning of the device theoretically.
In this paper we investigate options for monolithically integrated multiwavelength transmitters in indium phosphidebased
materials. In particular, we focus on transmitters that use arrayed waveguide gratings as wavelength selective
elements. The multiwavelength lasers that simultaneously emit on different wavelength channels are crucial in Fiber-tothe-
Home systems because they increase the bandwidth and the transmission capacity of such optical networks.
Arrayed waveguide grating (AWG) devices play a crucial role in wavelength division multiplexing (WDM) networks
and links. AWGs are key building blocks in multi-wavelength receivers and transmitters, wavelength routers, add-drop
multiplexers and optical crossconnects. AWG size becomes a critical issue when they are used in higher complexity
photonic integrated circuits. The last years have shown a steady reduction of AWG device dimensions in silica-on-silicon,
silicon-on-insulator and InP-based technologies. Extremely compact AWGs with good performance are feasible and allow
for a significant reduction in cost, when integrated with other components in photonic integrated circuits.
A tunable Mach-Zehnder wavelength duplexer has been realized based on P-i-n-N InGaAsP/InP. It has been
made polarization insensitive by proper wafer layer stack and proper waveguide geometry. The layer stack for
the duplexer was tested first with a waveguide phase shifter, which resulted in up to 36°/(V•mm) phase shifting
efficiency for TE polarization, which is slightly more efficient than the most efficient phase shifter reported to
date in bulk InP at 1.55 μm, and with much lower transmission loss[1]. The transmission loss was measured to
be 4 dB/cm (5 dB/cm) for TE (TM) polarized light, for 2 μm wide shallowly etched waveguides, which is rather
low compared to other reported high efficiency phase shifters for this material system. With this layerstack, we
designed a Mach-Zehnder (MZ) duplexer with narrow, 1.5 μm wide, deeply etched phase shifters that meet the
polarization insensitivity requirement. The measurement results showed that the phase shifting efficiency of this
narrow and deeply etched duplexer is up to 34°/(V•mm) for both TE and TM polarization, and the transmission
loss of this 1.5 μm wide waveguide is about 10 dB/cm for both TE and TM polarization. This is also the first
reported deeply etched narrow phase shifter with high phase shifting efficiency and relatively low loss.
Arrayed waveguide gratings and MMI couplers are key components in Photonic Integrated Circuits. However, mass application of PICs still has to come. The road to such a broad application is reviewed.
Multi-wavelength transmitters and receivers are the key elements for point-to-point WDM links. The functionality of the links is increased by the addition of optical add-drop multiplexers (OADMs) and WDM networks are formed by using optical cross-connects (OXCs).
For a successful monolithic integration of these WDM components, the number of elementary components from which they are made has to be small, in order to keep the technological challenges manageable. In this paper we will identify the building blocks and show how they are used.
A scattering matrix oriented CAD tool is presented for design and simulation of photonic integrated circuits. In a scattering matrix approach each component is represented by a scattering matrix which describes the signal transfer between the different ports of the component. These components are usually waveguides. As an example of a more complicated component simulation of an optical PHASAR demultiplexer will be described and the potential of the approach will be illustrated in simulating an integrated add-drop multiplexer and comparing the results with measurement data of a realized device.
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