In order to meet the industry’s increasingly demanding requirements, especially in the area of improving pattern edge placement error for multiple patterning processes, we have developed the leading edge NSR-S635E ArF immersion scanner. The NSR-S635E delivers marked enhancements in scanner performance compared to the previous generation system, and provides expanded alignment capacity with a groundbreaking system called the inline Alignment Station (iAS) [1]. In this paper, we introduce the details of the NSR-S635E, including iAS, and demonstrate their capabilities for solving production challenges now and in the future.
The semiconductor technology roadmap suggests that multiple patterning techniques will be used at the 7nm node. The final lithography accuracy is determined by what is known as the "on-product" performance, which includes projection lens heating, illumination condition variations, product wafer related errors, and long term stability. It is evident that on product performance improvement is imperative now, and will become even more crucial in coming years. Nikon has developed the next-generation lithography system focusing on optimizing the main factors impacting on product performance. In this paper, we will introduce the details of the next-generation Nikon scanner and provide supporting performance data.
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