Silvaco simulation software was used to study the influence of applied bias on the energy band of field-assisted GaSb/GaAs photocathode under different thicknesses and p-type doping concentrations of GaAs emission layer. The simulation results demonstrated that only 2V applied bias voltage can perfectly eliminate the barrier at the heterojunction interface and will not cause a large dark current when the GaSb layer was p-type with the doping concentration of 1×1019 cm-3 and the GaAs emission layer was gradient doping. The GaAs emitting layer with gradient doping consists of a GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1016 cm-3, GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1017 cm-3, and GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1018 cm-3. This simulation study provides theoretical guidance for the preparation of field-assisted GaSb/GaAs photocathode.
In order to explore the stability of transmissive GaAs photocathode in ultra-high vacuum system, the activation experiment and re-caesiation experiment of transmissive GaAs photocathode were carried out, and the photocurrent curves after CsO activation and after re-caesiation were tested. Experiments show that high and low temperature thermal cleaning is conducive to CsO deposition and forms a stable structure to improve the photoelectric emission capability and stability of the transmissive GaAs photocathode. Although re-caesiation activation can partially restore the photoemission efficiency of the transmissive GaAs photocathode, it will reduce the stability of the activation layer and shorten the lifetime of the transmissive GaAs photocathode.
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