Spin-dependant tunnelling in ultrathin Schottky junctions based on La0.66Sr0.33MnO3 / SrTiO3:Nb interfaces (Conference Presentation)

Philippe Lecoeur; Georg Kurij; Aurélie Solignac; Thomas Maroutian; Guillaume Agnus; Ruben Guerrero; Laurie E. Calvet; Myriam Pannetier-Lecoeur

doi:10.1117/12.2277798

19 September 2017 Spin-dependant tunnelling in ultrathin Schottky junctions based on La0.66Sr0.33MnO3 / SrTiO3:Nb interfaces (Conference Presentation)

Philippe Lecoeur, Georg Kurij, Aurélie Solignac, Thomas Maroutian, Guillaume Agnus, Ruben Guerrero, Laurie E. Calvet, Myriam Pannetier-Lecoeur

Author Affiliations +

Proceedings Volume 10357, Spintronics X; 1035706 (2017) https://doi.org/10.1117/12.2277798
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

Since the first observation of tunnelling effect in La0.7Sr0.3MnO3 based magnetic structures, the search for high TMR values has been the main goal of research in this field, aiming at developing high sensitive magnetic sensors. Nevertheless, oxides TMR often have high level of noise when using SrTiO3 as insulating barrier drastically reducing the interest of such devices [1]. Recently we introduced the use of heavily doped n-type semiconductor SrTi0.8Nb0.2O3 as fully depleted layer to form the insulating barrier [2-3]. Magneto-transport properties of the MTJs were studied as a function of applied bias, temperature and barrier thickness. It is found that using semiconducting barrier at the place of the standard insulator, leads to a significantly improved reproducibility of results and in the spectral noise density reduced by three orders of magnitude at low temperature. We ascribe that fact to a strongly reduced amount of defects, such as oxygen vacancies, in doped SrTi0.8Nb0.2O3. This results brings novel opportunities to develop high sensitive magnetic devices working at low temperature. [1] A. Solignac, G. Kurij, R. Guerrero, G. Agnus, T. Maroutian, C. Fermon, M. PArnnetier-Lecoeur, Ph. Lecoeur, SPIE Proceedings Series, 2015, 9551, pp.95512F (2016) [2] G. Kurij, A. Solignac, T. Maroutian, G. Agnus, R. Guerrero, L. E. Calvet, M. Pannetier-Lecoeur, and Ph. Lecoeur, Appl. Phys. Lett. 110, 082405 (2017) [3] G. Kurij, L. E. Calvet, R. Guerrero, T. Maroutian, G. Agnus, A. Solignac, and Ph. Lecoeur, Thin Solid Films vol. 716, part B, 82-85 (2016)

Conference Presentation

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Philippe Lecoeur, Georg Kurij, Aurélie Solignac, Thomas Maroutian, Guillaume Agnus, Ruben Guerrero, Laurie E. Calvet, and Myriam Pannetier-Lecoeur "Spin-dependant tunnelling in ultrathin Schottky junctions based on La0.66Sr0.33MnO3 / SrTiO3:Nb interfaces (Conference Presentation)", Proc. SPIE 10357, Spintronics X, 1035706 (19 September 2017); https://doi.org/10.1117/12.2277798

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KEYWORDS

Magnetism

Oxides

N-type semiconductors

Thin films

Interfaces

Magnetic semiconductors

Magnetic sensors

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