Paper
17 April 1998 Preparation of light-emitting devices with poly(p-phenylenevinylene): effects of thermal elimination conditions and polymer layer thickness on device performance
Chang Seoul, Jai Ick Kang, Souk Il Mah, Changhee Lee
Author Affiliations +
Abstract
The thermal elimination conditions for more efficient poly(p- phenylene vinylene) polymer light-emitting diodes were established: the precursor films must be heated to 230 degrees Celsius and kept at that temperature for 5 min. under a N2 flow of 50 ml/min. By the heat treatment the degree of conversion to PPV was about 70%. The external quantum efficiency of 0.0078% was achieved for the ITO/70% PPV/Al devices. The brightness of the device was calculated from the efficiency to be 2.3 cd/m2 at 200 MV/m (current density of 0.2 mA/mm2).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang Seoul, Jai Ick Kang, Souk Il Mah, and Changhee Lee "Preparation of light-emitting devices with poly(p-phenylenevinylene): effects of thermal elimination conditions and polymer layer thickness on device performance", Proc. SPIE 3281, Polymer Photonic Devices, (17 April 1998); https://doi.org/10.1117/12.305419
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Cited by 1 scholarly publication.
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KEYWORDS
Polymers

Heat treatments

Light emitting diodes

Thermal effects

Electroluminescence

Organic light emitting diodes

Quantum efficiency

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