Influence of process parameters on the growth of pulsed-laser-deposited thin bismuth films

O. Boffoue; B. Lenoir; Louis Hennet; N. Maloufi; H. Scherrer; A. Dauscher

doi:10.1117/12.308596

26 May 1998 Influence of process parameters on the growth of pulsed-laser-deposited thin bismuth films

O. Boffoue, B. Lenoir, Louis Hennet, N. Maloufi, H. Scherrer, A. Dauscher

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308596
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Bismuth films were prepared by pulsed laser depcsition (PLD) onto glass or oriented Si(100) substrates. They were characterized by scanning electron microscopy, transmission electron microscopy, atomic force microscopy and X ray diffraction. Influences of the presence of a gaseous background, the deposition temperature, the nature of substrate and the deposition duration on the growth of bismuth films have been studied. All these parameters play an important role in the way of growth. Well crystallized and dense films presenting smooth surfaces are achieved for a deposition temperature of 70°C. Similar textures are obtained on both glass and Si(100) substrates after long deposition durations whereas the beginning of growth takes place in a completely different manner. Keywords: pulsed laser deposition, thin films, bismuth, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, X ray diffraction

Citation Download Citation

O. Boffoue, B. Lenoir, Louis Hennet, N. Maloufi, H. Scherrer, and A. Dauscher "Influence of process parameters on the growth of pulsed-laser-deposited thin bismuth films", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308596

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