Tailoring hot carrier effects in semiconductor nanowires by spatial confinement

Hamidreza Esmaielpour; Nabi Isaev; Imam Makhfudz; Markus Döblinger; Jonathan J. Finley; Gregor Koblmüller

doi:10.1117/12.3001134

9 March 2024 Tailoring hot carrier effects in semiconductor nanowires by spatial confinement

Hamidreza Esmaielpour, Nabi Isaev, Imam Makhfudz, Markus Döblinger, Jonathan J. Finley, Gregor Koblmüller

Proceedings Volume PC12881, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XIII; PC128810F (2024) https://doi.org/10.1117/12.3001134
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

III-V nanowire structures have shown promising results in mitigating hot carrier thermalization rates suitable for hot carrier solar cell applications. This effect is attributed to the spatial confinement of charged particles and the adjustment of material properties in these nanostructures. Furthermore, by designing vertically standing nanowires, it is possible to improve photo-absorption by increasing internal surface reflection. Investigating the properties of hot carriers in core-shell InGaAs nanowires has shown evidence for a strong diameter dependence of these nanostructures. Determining the origin of this effect provides valuable information for the development of efficient hot carrier absorbers for 3rd generation solar cells.

Conference Presentation

Citation Download Citation

Hamidreza Esmaielpour, Nabi Isaev, Imam Makhfudz, Markus Döblinger, Jonathan J. Finley, and Gregor Koblmüller "Tailoring hot carrier effects in semiconductor nanowires by spatial confinement", Proc. SPIE PC12881, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XIII, PC128810F (9 March 2024); https://doi.org/10.1117/12.3001134

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