InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs

W. Y. Fu; H. W. Choi

doi:10.1117/12.2289572

14 February 2018 InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs

W. Y. Fu, H. W. Choi

Proceedings Volume 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII; 105540U (2018) https://doi.org/10.1117/12.2289572
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

While quantum heterostructures are typically achieved via growth, here in this paper we would like to demonstrate InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs. The fabricated quantum nanodisks of sub-30 nm dimension are investigated using micro-photoluminescence measurements and time-resolved photoluminescence studies. Changes in quantum confinement have been successfully demonstrated by microphotoluminescence studies with a reduction of the PL bandwidth of over 54% after fabrication of the quantum nanodisks. The quantum confinement effect of the nanodisk is further verified using TRPL measurement, which demonstrated a reduction of over 80% of TRPL lifetime. The reduction in lifetime implies an increase in radiative recombination rate and thus better quantum efficiencies.

Citation Download Citation

W. Y. Fu and H. W. Choi "InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105540U (14 February 2018); https://doi.org/10.1117/12.2289572

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