Paper
6 February 2012 Electrically driven nanoarrow array green LED
Author Affiliations +
Abstract
An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J.-R. Chang, S.-P. Chang, Y.-C. Chen, K.-P. Sou, Y.J. Cheng, H.-C. Kuo, and C.-Y. Chang "Electrically driven nanoarrow array green LED", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 827815 (6 February 2012); https://doi.org/10.1117/12.907749
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KEYWORDS
Light emitting diodes

Gallium nitride

Green light emitting diodes

Scanning electron microscopy

Glasses

Nanolithography

Etching

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