Prof. Hao-Chung Kuo Profile

Prof. Hao-Chung Kuo

Professor and Chairman at National Yang Ming Chiao Tung Univ.

SPIE Involvement:

Author

Publications (69)

Proceedings Article | 13 March 2024 Presentation

Compact structured light generation and depth perception from integration of metasurface and photonic crystal surface-emitting laser

Wen-Cheng Hsu, Yu-Heng Hong, Chia-Hsun Chang, Hao-Chung Kuo, Yao-Wei Huang

Proceedings Volume PC12897, PC1289709 (2024) https://doi.org/10.1117/12.3001053

KEYWORDS: Structured light, Photonic crystals, Laser crystals, Projection systems, Vertical cavity surface emitting lasers, Sensing systems, Power consumption, Diffractive optical elements, Depth maps, Structural sensing

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Proceedings Article | 8 March 2024 Presentation + Paper

InGaN-based Micro-LEDs: enhancing efficiency and speed for next-generation visible light communication applications

Wei-Ta Huang, Tzu-Yi Lee, Fu-He Hsiao, Wen-Chien Miao, Daisuke Iida, Kuo-Bin Hong, Chien-Chung Lin, Fang-Chung Chen, Shu-Wei Chang, Ray-Hua Horng, Yu-Heng Hong, Yao-Wei Huang, Kazuhiro Ohkawa, Hao-Chung Kuo

Proceedings Volume 12886, 1288606 (2024) https://doi.org/10.1117/12.3000782

KEYWORDS: Visible light communication, Light emitting diodes, Quantum wells, External quantum efficiency, Indium gallium nitride, Atomic layer deposition, Quantum efficiency

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Proceedings Article | 5 October 2023 Presentation + Paper

Depth sensing with metasurface and PCSEL integration

Wen-Cheng Hsu, Chia-Hsun Chang, Yu-Heng Hong, Hao-Chung Kuo, Yao-Wei Huang

Proceedings Volume 12648, 1264806 (2023) https://doi.org/10.1117/12.2676118

KEYWORDS: Holograms, Projection systems, Sensing systems, Near infrared, Structured light

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Proceedings Article | 15 March 2023 Presentation + Paper

Polarization-sensitive imaging using optical coherence tomography and a HCG-VCSEL laser

Chien-Hua Peng, Yu-Cheng Mei, Hung-Kai Chen, Ting-Yen Tsai, Ting-Hao Chen, Chuan-Bor Chueh, Dalila Ellafi, Chris Chase, Hao-Chung Kuo, Michael C. Y. Huang, Hsiang-Chieh Lee

Proceedings Volume 12439, 124390G (2023) https://doi.org/10.1117/12.2649499

KEYWORDS: Optical coherence tomography, Light sources, Polarization, Vertical cavity surface emitting lasers, Coherence imaging, 3D printing, Plastics, Laser dentistry, Polarization imaging, Optical imaging

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Proceedings Article | 3 March 2022 Presentation + Paper

High-speed optical coherence tomography imaging with a tunable HCG-VCSEL light source at the 1060nm wavelength window

Ting-Yen Tsai, Ting-Hao Chen, Hung-Kai Chen, Chuan-Bor Chueh, Dalila Ellafi, Chris Chase, Hao-Chung Kuo, Meng-Tsan Tsai, Michael C. Y. Huang, Hsiang-Chieh Lee

Proceedings Volume 12020, 120200F (2022) https://doi.org/10.1117/12.2608803

KEYWORDS: Optical coherence tomography, Vertical cavity surface emitting lasers, Light sources, Microelectromechanical systems, Calibration, Imaging systems, Interferometers, Mirrors, Coherence imaging, Wavelength tuning

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Proceedings Article | 10 October 2020 Presentation + Paper

First optical design for wide angle micro LED without second lens

Zhi-Ting Ye, Hsiang-chiu Wu, Hao-Chung Kuo

Proceedings Volume 11548, 115480K (2020) https://doi.org/10.1117/12.2574621

KEYWORDS: Light emitting diodes, Optical design, Light sources, Waveguides, Lens design, Diffusion, Modulation, Packaging, Diffusers

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Proceedings Article | 26 February 2019 Paper

Circularly polarized lasing of ultraviolet plasmonic gammadion nanocavity

Pi-Ju Cheng, Ming-Sheng Lai, Yu-Hao Hsiao, Cheng-Li Yu, Chiao-Yun Chang, Chi-Ti Hsieh, Chih-Hsien Lin, Min-Hsiung Shih, Hao-Chung Kuo, Shu-Wei Chang

Proceedings Volume 10912, 109121C (2019) https://doi.org/10.1117/12.2507979

KEYWORDS: Plasmonics, Gallium nitride, Polarization, Metals, Lasers, Ultraviolet radiation, Dichroic materials, Finite element methods, Light sources, Refractive index

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Proceedings Article | 8 March 2016 Paper

Blue resonant-cavity light-emitting diode with half milliwatt output power

Pinghui Yeh, Chi-Chieh Chang, Yu-Ting Chen, Da-Wei Lin, Chun Chia Wu, Jhao Hang He, Hao-Chung Kuo

Proceedings Volume 9768, 97680P (2016) https://doi.org/10.1117/12.2211663

KEYWORDS: Light emitting diodes, Distributed Bragg reflectors, Reflector design, Diodes, Diffusion, Semiconducting wafers, Gallium nitride, Electro-optical engineering

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SPIE Journal Paper | 21 April 2015

High-efficiency and low assembly-dependent chip-scale package for white light-emitting diodes

Che-Hsuan Huang, Kuo-Ju Chen, Ming-Ta Tsai, Min-Hsiung Shih, Chia-Wei Sun, Wei-I Lee, Chien-Chung Lin, Hao-Chung Kuo

JPE, Vol. 5, Issue 01, 057606, (April 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057606

KEYWORDS: Light sources and illumination, Light emitting diodes, Reflectors, Packaging, Luminous efficiency, Light sources, Reflectivity, Monte Carlo methods, Internal quantum efficiency, Scattering

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Proceedings Article | 13 March 2015 Paper

Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes

Fang-Ming Chen, Jih-Yuan Chang, Yen-Kuang Kuo, Bing-Cheng Lin, Hao-Chung Kuo

Proceedings Volume 9363, 93632B (2015) https://doi.org/10.1117/12.2077946

KEYWORDS: Electron beam lithography, Ultraviolet light emitting diodes, Stereolithography, Magnesium, Polarization, Aluminum, Superlattices, Light emitting diodes, Numerical analysis, Crystals

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Proceedings Article | 9 March 2015 Paper

Large area lighting applications with organic dye embedded flexible film

Huang-Yu Lin, Zong-Yi Tu, Pei-Cheng Ku, Chien-Chung Lin, Hao-Chung Kuo

Proceedings Volume 9383, 93830N (2015) https://doi.org/10.1117/12.2077462

KEYWORDS: Waveguides, Light sources and illumination, Light emitting diodes, YAG lasers, Dysprosium, Light sources, Particles, Scanning electron microscopy, Blue light emitting diodes, Solid state lighting

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SPIE Journal Paper | 5 March 2015

Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes

An-Jye Tzou, Bing-Cheng Lin, Chia-Yu Lee, Da-Wei Lin, Yu-Kuang Liao, Zhen-Yu Li, Gou-Chung Chi, Hao-Chung Kuo, Chun-Yen Chang

JPE, Vol. 5, Issue 01, 057604, (March 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057604

KEYWORDS: Light emitting diodes, Quantum wells, External quantum efficiency, Gallium nitride, Silicon, Gallium, Energy efficiency, Crystals, Aluminum, Transmission electron microscopy

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Proceedings Article | 27 February 2015 Paper

Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities

Tsung Sheng Kao, Tzeng-Tsong Wu, Che-Wei Tsao, Jyun-Hao Lin, Da-wei Lin, Shyh-Jer Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Yan-Kuin Su

Proceedings Volume 9372, 93720C (2015) https://doi.org/10.1117/12.2078577

KEYWORDS: Photonic crystals, Gallium nitride, Polarization, Etching, Photomasks, Scanning electron microscopy, Photonic crystal devices, Electrical engineering, Electron beam lithography, Finite-difference time-domain method

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SPIE Journal Paper | 19 February 2015

Luminous efficiency enhancement of white light-emitting diodes by using a hybrid phosphor structure

Bing-Cheng Lin, Jhih-Kai Huang, Kuo-Ju Chen, Sheng-Huan Chiu, Zong-Yi Tu, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Mei-Tan Wang, Jung-Min Hwang, Hao-Chung Kuo

JPE, Vol. 5, Issue 01, 057603, (February 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057603

KEYWORDS: Light emitting diodes, Luminous efficiency, Magnesium, Monte Carlo methods, Silicon, Gallium nitride, Roads, Coating, YAG lasers, Light sources and illumination

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SPIE Journal Paper | 7 July 2014 Open Access

High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate

Chen-Yu Shieh, Ming-Ta Tsai, Zhen-Yu Li, Hao-Chung Kuo, Jenq-Yang Chang, Gou-Chung Chi, Wei-I Lee

JNP, Vol. 8, Issue 01, 083081, (July 2014) https://doi.org/10.1117/12.10.1117/1.JNP.8.083081

KEYWORDS: Sapphire, Gallium nitride, Transmission electron microscopy, Ultraviolet radiation, Raman spectroscopy, Crystals, Satellites, Gallium arsenide, Interfaces, Manufacturing

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Proceedings Article | 8 March 2014 Paper

Characterization of 380nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition

C. Shieh, Z. Li, H. Kuo, J. Chang, G. Chi

Proceedings Volume 8986, 898629 (2014) https://doi.org/10.1117/12.2039621

KEYWORDS: Ultraviolet light emitting diodes, Gallium nitride, Sapphire, Indium, Transmission electron microscopy, Internal quantum efficiency, External quantum efficiency, Chemical vapor deposition, Electroluminescence, Light emitting diodes

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Proceedings Article | 27 February 2014 Paper

Improvement of carrier distribution by using thinner quantum well with different location

Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Chien-Chung Lin, Hao-Chung Kuo

Proceedings Volume 9003, 90030F (2014) https://doi.org/10.1117/12.2038402

KEYWORDS: Light emitting diodes, Quantum wells, Quantum efficiency, External quantum efficiency, Light sources and illumination, Software development, Gallium nitride, Gallium, Photons, Photonics

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Proceedings Article | 27 March 2013 Paper

Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer

C. Shieh, Z. Li, H. Kuo, G. Chi

Proceedings Volume 8625, 862529 (2013) https://doi.org/10.1117/12.2004465

KEYWORDS: Green light emitting diodes, Tin, Gallium nitride, Electroluminescence, Sapphire, Quantum wells, Electron microscopes, Luminescence, Light emitting diodes, Epitaxial lateral overgrowth

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Proceedings Article | 27 March 2013 Paper

Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition

C. Shieh, Z. Li, C. Chiu, P. Tu, H. Kuo, G. Chi

Proceedings Volume 8625, 862525 (2013) https://doi.org/10.1117/12.2003673

KEYWORDS: Gallium nitride, Ultraviolet light emitting diodes, Sapphire, Raman spectroscopy, Indium, Light emitting diodes, Ultraviolet radiation, Chemical vapor deposition, Excitons, Temperature metrology

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Proceedings Article | 25 March 2013 Paper

Improve GaAs solar cells efficiency by using high-transmittance textured PDMS film

H. Han, H. Chen, C. Lin, Y. Tsai, H. Kuo, Peichen Yu

Proceedings Volume 8620, 86201V (2013) https://doi.org/10.1117/12.2003127

KEYWORDS: Solar cells, Gallium arsenide, Light scattering, External quantum efficiency, Photovoltaics, Transmittance, Silica, Reflection, Reflectivity, Applied physics

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Proceedings Article | 25 March 2013 Paper

Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu-Lin Tsai, Chien-Chung Lin, Hau-Vei Han, Hsin-Chu Chen, Kuo-Ju Chen, Wei-Chi Lai, Jin-Kong Sheu, Fang-I Lai, Peichen Yu, Hao-Chung Kuo

Proceedings Volume 8620, 86201M (2013) https://doi.org/10.1117/12.2005823

KEYWORDS: Cadmium sulfide, Solar cells, External quantum efficiency, Absorption, Photovoltaics, Ultraviolet radiation, Quantum dots, Quantum wells, Distributed Bragg reflectors, Reflectivity

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Proceedings Article | 15 March 2013 Paper

Fano resonances GaN-based high contrast grating surface-emitting lasers

Tzeng-Tsong Wu, Shu-Hsien Wu, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 8633, 86330B (2013) https://doi.org/10.1117/12.2002911

KEYWORDS: Reflectivity, Polarization, Vertical cavity surface emitting lasers, Gallium nitride, Neodymium, Electrophoretic light scattering, Electroluminescence, Resonators, Scattering, Ions

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Proceedings Article | 4 March 2013 Paper

High-quality quantum-dot-based full-color display technology by pulsed spray method

Kuo-Ju Chen, Hsin-Chu Chen, Kai-An Tsai, Chien-Chung Lin, Hsin-Han Tsai, Shih-Hsuan Chien, Bo-Siao Cheng, Yung-Jung Hsu, Min-Hsiung Shih, Hao-Chung Kuo

Proceedings Volume 8641, 864121 (2013) https://doi.org/10.1117/12.2004101

KEYWORDS: RGB color model, Ultraviolet radiation, Quantum dot displays, Coating, Light emitting diodes, Display technology, Reflectivity, Absorption, Quantum dots, Zinc

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Proceedings Article | 11 October 2012 Paper

MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color

Hao-Chung Kuo, Yuh-Jen Cheng

Proceedings Volume 8467, 84670C (2012) https://doi.org/10.1117/12.970434

KEYWORDS: Light emitting diodes, Gallium nitride, Quantum wells, Polarization, Scanning electron microscopy, Metalorganic chemical vapor deposition, Silica, Nanolithography, Crystals, Reactive ion etching

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Proceedings Article | 29 February 2012 Paper

Self-pulsation in two-section laser with an air gap

Chien-Chung Lin, Chih-Wei Lin, Chen-Yu Chien, Hao-Chung Kuo

Proceedings Volume 8255, 825523 (2012) https://doi.org/10.1117/12.908924

KEYWORDS: Optical simulations, Microwave radiation, Laser optics, Semiconductors, Etching, Photonics systems, Semiconductor lasers, Coating, Interfaces, Finite element methods

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Proceedings Article | 28 February 2012 Paper

Lasing action in gallium nitride photonic quasicrystal nanorod arrays

Shih-Pang Chang, Kuok-Pan Sou, Jet-Rung Chang, Yuh-Jen Cheng, Yuh-Jing Li, Yi-Chen Chen, Hao-Chung Kuo, Ken-Yuh Hsu, Chun-Yen Chang

Proceedings Volume 8262, 82620X (2012) https://doi.org/10.1117/12.908308

KEYWORDS: Gallium nitride, Scanning electron microscopy, Quantum wells, Nanolithography, Etching, Photonic nanostructures, Crystals, Optical pumping, Silica, Nanorods

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Proceedings Article | 28 February 2012 Paper

Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

Ching-Hsueh Chiu, Po-Min Tu, Jet-Rung Chang, Wei-Ting Chang, Hao-Chung Kuo, Chun-Yen Chang

Proceedings Volume 8262, 826222 (2012) https://doi.org/10.1117/12.912226

KEYWORDS: Ultraviolet light emitting diodes, Light emitting diodes, Indium, Quantum wells, Aluminum, Transmission electron microscopy, Atomic force microscopy, Gallium nitride, Ultraviolet radiation, Quantum efficiency

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Proceedings Article | 28 February 2012 Paper

Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

Shih-Cheng Huang, Kun-Ching Shen, Po-Min Tu, Dong-Sing Wuu, Hao-Chung Kuo, Ray-Hua Horng

Proceedings Volume 8262, 82621L (2012) https://doi.org/10.1117/12.909580

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Gallium nitride, Internal quantum efficiency, Metalorganic chemical vapor deposition, Ultraviolet light emitting diodes, Transmission electron microscopy, Luminescence, Indium gallium nitride, Quantum efficiency

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Proceedings Article | 28 February 2012 Paper

Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates

Huei-Min Huang, Tien-Chang Lu, Chiao-Yun Chang, Yu-Pin Lan, Shih-Chun Ling, Wei-Wen Chan, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 8262, 82621Y (2012) https://doi.org/10.1117/12.906635

KEYWORDS: Gallium nitride, Polarization, Indium gallium nitride, Quantum wells, Raman spectroscopy, Phonons, Scanning electron microscopy, Epitaxial lateral overgrowth, Optical testing, Nanorods

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Proceedings Article | 21 February 2012 Paper

Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots

Chien-chung Lin, Hsin-Chu Chen, Hau-Vei Han, Yu-Lin Tsai, Chia-Hua Chang, Min-An Tsai, Hao-Chung Kuo, Peichen Yu

Proceedings Volume 8256, 825609 (2012) https://doi.org/10.1117/12.908514

KEYWORDS: Cadmium sulfide, Solar cells, External quantum efficiency, Ultraviolet radiation, Quantum dots, Antireflective coatings, Photovoltaics, Silicon, Quantum efficiency, Resistance

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Proceedings Article | 7 February 2012 Paper

Recent advances on CW current injection blue VCSELs

Shing-Chung Wang, Tien-Chang Lu, Hao-Chung Kuo

Proceedings Volume 8276, 827607 (2012) https://doi.org/10.1117/12.907056

KEYWORDS: Vertical cavity surface emitting lasers, Stereolithography, Gallium nitride, Reflectivity, Aluminum nitride, Indium gallium nitride, Dielectrics, Laser damage threshold, Charge-coupled devices

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Proceedings Article | 6 February 2012 Paper

Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure

Shih-Pang Chang, Kuok-Pan Sou, Jet-Rung Chang, Yuh-Jen Cheng, Yuh-Jing Li, Yi-Chen Chen, Hao-Chung Kuo, Ken-Yuh Hsu, Chun-Yen Chang

Proceedings Volume 8278, 82781A (2012) https://doi.org/10.1117/12.908121

KEYWORDS: Gallium nitride, Light emitting diodes, Superlattices, Quantum efficiency, Blue light emitting diodes, Stereolithography, Atomic force microscopy, Quantum wells, Luminescence, Crystals

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Proceedings Article | 6 February 2012 Paper

Electrically driven nanoarrow array green LED

J.-R. Chang, S.-P. Chang, Y.-C. Chen, K.-P. Sou, Y.J. Cheng, H.-C. Kuo, C.-Y. Chang

Proceedings Volume 8278, 827815 (2012) https://doi.org/10.1117/12.907749

KEYWORDS: Light emitting diodes, Gallium nitride, Green light emitting diodes, Scanning electron microscopy, Nanolithography, Glasses, Etching, Quantum wells, Reactive ion etching, Time metrology

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Proceedings Article | 17 December 2011 Paper

Highly efficient InGaN-based light emitting devices grown on nanoscale patterned substrates by MOCVD

Chien-Chung Lin, Ching-Hsueh Chiu, H. W. Huang, Shih-Pang Chang, Hao-Chung Kuo, Chun-Yen Chang

Proceedings Volume 8312, 83120C (2011) https://doi.org/10.1117/12.915513

KEYWORDS: Light emitting diodes, Gallium nitride, Sapphire, Metalorganic chemical vapor deposition, Nanotechnology, Scanning electron microscopy, Electroluminescence, Epitaxy, Solid state lighting, Nanorods

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Proceedings Article | 24 September 2011 Paper

Efficiency droop improvement in GaN-based light emitting diodes by graded-composition electron blocking layer

C. H. Wang, S. P. Chang, W. T. Chang, J. C. Li, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 8123, 81231D (2011) https://doi.org/10.1117/12.892997

KEYWORDS: Light emitting diodes, Electron beam lithography, Aluminum, Gallium nitride, Electron transport, Polarization, Chemical vapor deposition, Solid state lighting, Internal quantum efficiency, Metalorganic chemical vapor deposition

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Proceedings Article | 24 September 2011 Paper

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned Si substrate

Ching-Hsueh Chiu, Chien-Chung Lin, Dongmei Deng, Hao-Chung Kuo, Kei-May Lau

Proceedings Volume 8123, 81231F (2011) https://doi.org/10.1117/12.893047

KEYWORDS: Light emitting diodes, Silicon, Gallium nitride, Transmission electron microscopy, Quantum wells, Temperature metrology, Luminescence, Electroluminescence, Silicon carbide, Photonics

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Proceedings Article | 4 March 2011 Paper

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Proceedings Volume 7939, 79391X (2011) https://doi.org/10.1117/12.876656

KEYWORDS: Light emitting diodes, Gallium nitride, Silicon, Polarization, Electroluminescence, Transmission electron microscopy, External quantum efficiency, Metalorganic chemical vapor deposition, Silicon carbide, Image transmission

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Proceedings Article | 4 March 2011 Paper

Fabrication and lasing characteristics of GaN nanopillars

Ming-Hua Lo, Yuh-Jen Cheng, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 7939, 79391T (2011) https://doi.org/10.1117/12.874151

KEYWORDS: Gallium nitride, Excitons, Nanolithography, Crystals, Nickel, Etching, Thin films, Plasma, Metalorganic chemical vapor deposition, Nanowires

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Proceedings Article | 9 February 2011 Paper

Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions

C. H. Wang, D. W. Lin, C. Chiu, S. P. Chang, Z. Y. Li, J. C. Li, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 7954, 795408 (2011) https://doi.org/10.1117/12.874935

KEYWORDS: Light emitting diodes, Quantum wells, Electroluminescence, Gallium nitride, Surface plasmons, Electrons, Polarization, Quantum efficiency, Transmission electron microscopy, Dielectric polarization

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Proceedings Article | 17 March 2010 Paper

Output power enhancement of light-emitting diodes with defect passivation layer

Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, Che-Ming Liu

Proceedings Volume 7602, 76021X (2010) https://doi.org/10.1117/12.841513

KEYWORDS: Etching, Silica, Light emitting diodes, Gallium nitride, Optical lithography, Scanning electron microscopy, Transmission electron microscopy, Chemical mechanical planarization, Crystals, Photomasks

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Proceedings Article | 11 March 2010 Paper

The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers

S. W. Chen, T. T. Kao, T. T. Wu, T. C. Lu, H. C. Kuo, S. C. Wang

Proceedings Volume 7602, 760215 (2010) https://doi.org/10.1117/12.840487

KEYWORDS: Photonic crystals, Polarization, Laser crystals, Gallium nitride, Laser damage threshold, Distributed Bragg reflectors, Optical pumping, Vertical cavity surface emitting lasers, Light wave propagation, Polymethylmethacrylate

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Proceedings Article | 16 February 2009 Paper

Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K

H. C. Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, T. C. Lu, S. C. Wang

Proceedings Volume 7216, 72161A (2009) https://doi.org/10.1117/12.808644

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Optical pumping, Reflectivity, Mirrors, Laser damage threshold, Optical microcavities, Dielectrics, Stereolithography, Continuous wave operation

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Proceedings Article | 18 November 2008 Paper

Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu, Min-An Tsai, Ching-Hua Chiu, Hao-chung Kuo, Yuh-Renn Wu

Proceedings Volume 7135, 71351Y (2008) https://doi.org/10.1117/12.804065

KEYWORDS: Platinum, Ion beams, Nanolithography, Luminescence, Quantum wells, Gallium nitride, Aluminum, Polarization, Optoelectronic devices, Nanorods

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Proceedings Article | 18 November 2008 Paper

Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD

C. Chiu, C. Chao, M. Lo, Y. Cheng, H. Kuo, P. Yu, T. Lu, S. Wang, K. Lau

Proceedings Volume 7135, 71351Z (2008) https://doi.org/10.1117/12.804291

KEYWORDS: Light emitting diodes, Silica, Gallium nitride, Sapphire, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Patterned sapphire substrate, External quantum efficiency, Nickel, Nanorods

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Proceedings Article | 2 September 2008 Paper

Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Yuh-Renn Wu, Peichen Yu, C. Chiu, Cheng-Yu Chang, H. Kuo

Proceedings Volume 7058, 70580G (2008) https://doi.org/10.1117/12.800658

KEYWORDS: Quantum wells, Polarization, Platinum, Luminescence, Ion beams, Indium gallium nitride, Nanolithography, Charge-coupled devices, Gallium nitride, Indium

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Proceedings Article | 15 February 2008 Paper

AlGaN/GaN multiple quantum wells grown by atomic layer deposition

M. Lo, Z. Li, J. Chen, T. Ko, T. Lu, H. Kuo, S. Wang

Proceedings Volume 6894, 68941V (2008) https://doi.org/10.1117/12.762158

KEYWORDS: Gallium nitride, Quantum wells, Laser sintering, Atomic layer deposition, Interfaces, Light emitting diodes, Superlattices, Scanning electron microscopy, Aluminum nitride, Sapphire

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Proceedings Article | 15 February 2008 Paper

Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates

Jun-Rong Chen, Tien-Chang Lu, Gen-Sheng Huang, Tsung-Shine Ko, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 6894, 68941U (2008) https://doi.org/10.1117/12.760296

KEYWORDS: Reflectivity, Infrared radiation, Phonons, Aluminum, Sapphire, Gallium nitride, Dielectrics, Crystals, FT-IR spectroscopy, Infrared spectroscopy

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Proceedings Article | 29 January 2008 Paper

Abnormal PL spectrum in InGaN MQW surface emitting cavity

J. T. Chu, Y.-J. Cheng, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 6908, 69080L (2008) https://doi.org/10.1117/12.762869

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Optical microcavities, Helium cadmium lasers, Sapphire, Dielectrics, Metalorganic chemical vapor deposition, Continuous wave operation, Vertical cavity surface emitting lasers

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Proceedings Article | 25 September 2007 Paper

Recent progress on GaN-based vertical cavity surface emitting lasers

T. C. Lu, C. C. Kao, G. S. Huang, H. C. Kuo, S. C. Wang

Proceedings Volume 6766, 67660G (2007) https://doi.org/10.1117/12.729281

KEYWORDS: Vertical cavity surface emitting lasers, Dielectrics, Gallium nitride, Reflectivity, Tantalum, Optical pumping, Optical microcavities, Sapphire, Gallium, Superlattices

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Proceedings Article | 8 February 2007 Paper

Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin-Chieh Yu, Jyh-Shyang Wang, Yan-Kuin Su, Shoou-Jinn Chang, Hao-Chung Kuo, Fang-I Lai, Y. H. Chang, Hong-Pin Yang

Proceedings Volume 6484, 64840E (2007) https://doi.org/10.1117/12.697732

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Indium arsenide, Zinc, Modulation, Diffusion, Indium gallium arsenide, Etching, Quantum wells, Metals

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Proceedings Article | 20 April 2006 Paper

Self-assembled Ni nanodot on SiO₂ film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, Gong-Ru Lin

Proceedings Volume 6195, 61951W (2006) https://doi.org/10.1117/12.663339

KEYWORDS: Silicon, Nickel, Annealing, Etching, Oxygen, Reactive ion etching, Photomasks, Luminescence, Semiconducting wafers, Oxides

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Proceedings Article | 3 March 2006 Paper

Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

H. Yao, G. Huang, T. Lu, C. Chen, W. Liang, H. Kuo, S. Wang

Proceedings Volume 6121, 612102 (2006) https://doi.org/10.1117/12.644706

KEYWORDS: Indium gallium nitride, Gallium nitride, Quantum dots, Metalorganic chemical vapor deposition, Atomic force microscopy, Diffusion, Reflectivity, Temperature metrology, Optical properties, Sapphire

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Proceedings Article | 23 February 2006 Paper

Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs substrate

Yu-Sheng Liao, Gong-Ru Lin, Hao-Chung Kuo, Milton Feng

Proceedings Volume 6119, 61190L (2006) https://doi.org/10.1117/12.645859

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Indium gallium phosphide, Photodiodes, Photodetectors, Gallium, PIN photodiodes, Heterodyning, Picosecond phenomena, Tunable lasers

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Proceedings Article | 22 February 2006 Paper

Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes

Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, Hao-Chung Kuo

Proceedings Volume 6134, 61340N (2006) https://doi.org/10.1117/12.645464

KEYWORDS: Light emitting diodes, Quantum wells, Ultraviolet light emitting diodes, Aluminum, Ultraviolet radiation, Electrons, Gallium nitride, Instrument modeling, Continuous wave operation, Semiconductors

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Proceedings Article | 3 December 2005 Paper

10-Gbps operation of a metamorphic InGaP buffered In_0.53Ga_0.47As p-i-n photodetector grown on GaAs substrate

Yu-Sheng Liao, Gong-Ru Lin, Chi-Kuan Lin, Yi-Shiang Chu, Hao-Chung Kuo, Milton Feng

Proceedings Volume 6020, 602023 (2005) https://doi.org/10.1117/12.636697

KEYWORDS: Gallium arsenide, Gallium, Picosecond phenomena, Indium gallium phosphide, Photodetectors, Indium gallium arsenide, Eye, Receivers, Mode locking, Semiconductor optical amplifiers

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Proceedings Article | 12 April 2005 Paper

Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence

Chia-Yang Chen, Chun-Jung Lin, Hao-Chung Kuo, Gong-Ru Lin, Yu-Lun Chueh, Li-Jen Chou, Chih-Wei Chang, Eric Diau

Proceedings Volume 5713, (2005) https://doi.org/10.1117/12.587997

KEYWORDS: Annealing, Silicon, Plasma enhanced chemical vapor deposition, Nanocrystals, Luminescence, Chemical species, Transmission electron microscopy, Oxygen, Thin films, Silicon films

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Proceedings Article | 4 April 2005 Paper

Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode

Chi-Kuan Lin, Gong-Ru Lin, Chun-Jung Lin, Hao-Chung Kuo, Chia-Yang Chen

Proceedings Volume 5734, (2005) https://doi.org/10.1117/12.587978

KEYWORDS: Silicon, Electroluminescence, Diodes, Molybdenum, Plasma enhanced chemical vapor deposition, Annealing, Oxygen, Luminescence, Nanocrystals, Silicon films

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Proceedings Article | 14 March 2005 Paper

Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Jung-Tang Chu, Min-Ying Tsai, Shing-Chung Wang

Proceedings Volume 5737, (2005) https://doi.org/10.1117/12.583286

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium, Modulation, Antimony, Metalorganic chemical vapor deposition, Gallium arsenide, Indium gallium arsenide, Temperature metrology, Aluminum

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Proceedings Article | 7 March 2005 Paper

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung-Tang Chu, Wen-Deng Liang, Chih-Chiang Kao, Hung-Wen Huang, Chen-Fu Chu, Hao-Chung Kuo, S. Wang

Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.583288

KEYWORDS: Light emitting diodes, Electrodes, Gallium nitride, Copper, Indium gallium nitride, Laser liftoff, Sapphire, Thermal effects, Fabrication, Semiconductor lasers

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Proceedings Article | 31 January 2005 Paper

Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

Chi-Kuan Lin, Hao-Chung Kuo, Yu-Sheng Liao, Gong-Ru Lin

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.577048

KEYWORDS: Gallium arsenide, Gallium, Indium gallium arsenide, Picosecond phenomena, Photodetectors, Indium gallium phosphide, Shape memory alloys, PIN photodiodes, Optoelectronic devices, Capacitance

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Proceedings Article | 31 January 2005 Paper

Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo, Y Chang, Y. Chang, K. Tseng, L. Laih, S. Wang, Hsin-Chieh Yu, Chia-Pin Sung, Hung-Pin Yang

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.577050

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Oxides, Capacitance, Aluminum, Resistance, Picosecond phenomena, Data communications, Reliability

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Proceedings Article | 20 January 2005 Paper

Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Yi-An Chang, Hao-Chung Kuo, Ya-Hsien Chang, Shing Chung Wang, Li-Hong Laih

Proceedings Volume 5628, (2005) https://doi.org/10.1117/12.577321

KEYWORDS: Gallium arsenide, Gallium, Quantum wells, Nitrogen, Optical simulations, Laser applications, Transparency, Temperature metrology, Indium nitride, Indium

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Proceedings Article | 16 June 2004 Paper

Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. Chang, Hao-chung Kuo, Fang-I Lai, Li-Hong Laih, S. C. Wang

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.530055

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Gallium arsenide, Metalorganic chemical vapor deposition, Indium, Aluminum, Eye, Capacitance, Resistance

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Proceedings Article | 16 June 2004 Paper

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

Fang-I Lai, Ya-Hsien Chang, Li-Hong Laih, Hao-chung Kuo, S. C. Wang

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.530023

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Eye, Semiconducting wafers, Reliability, Near field, Gallium arsenide, Gold, Gallium, Picosecond phenomena

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Proceedings Article | 29 August 2002 Paper

Highly uniform and highly reliable 850-nm VCSEL platform for high-speed optical communications

Hao Chung Kuo, Z. Shi, Minh Trieu, Xuesong Dong, Ghulam Hasnain, Chih Ping Kuo, Andrew Liao

Proceedings Volume 4905, (2002) https://doi.org/10.1117/12.481016

KEYWORDS: Vertical cavity surface emitting lasers, Reliability, Eye, Oxides, Semiconducting wafers, Optical communications, Resistance, Picosecond phenomena, Temperature metrology, Data communications

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Proceedings Article | 22 July 1998 Paper

Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

Deepak Sengupta, Sarath Gunapala, Thomas George, Sumith Bandara, C.-N. Chang-Chien, Rosa Leon, S. Kayali, Haochung Kuo, Wei-Chiao Fang, Hui Liu, Gregory Stillman

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317609

KEYWORDS: Gallium arsenide, Quantum well infrared photodetectors, Sensors, Silicon, Absorption, Quantum wells, Infrared radiation, Temperature metrology, Infrared sensors, Crystals

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Proceedings Article | 2 January 1998 Paper

Intermixed quantum well photodetectors for long-wavelength detection

Deepak Sengupta, A. Curtis, Jay Malin, Haochung Kuo, K. Hseih, Milton Feng, Gregory Stillman, A. Kar, Jyotirmoy Mazumder, Hui Liu, Wen Wang

Proceedings Volume 3211, (1998) https://doi.org/10.1117/12.345368

KEYWORDS: Quantum wells, Photodetectors, Annealing, Quantum well infrared photodetectors, Sensors, Infrared sensors, Sensor performance, Absorption

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Proceedings Article | 2 June 1994 Paper

Normal incidence multiple quantum well light modulator with exceedingly high contrast ratio

Hongen Shen, Jagadeesh Pamulapati, Michael Wraback, Monica Taysing-Lara, Peter Newman, Mitra Dutta, Haochung Kuo, Yicheng Lu

Proceedings Volume 2145, (1994) https://doi.org/10.1117/12.177136

KEYWORDS: Polarization, Modulators, Quantum wells, Excitons, Photon polarization, Absorption, Phase shift keying, Amplitude modulation, Birefringence, Gallium arsenide

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Proceedings Article | 26 May 1994 Paper

Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

Hongen Shen, Michael Wraback, Jagadeesh Pamulapati, Monica Taysing-Lara, Weimin Zhou, Mitra Dutta, Yu Lu, Haochung Kuo

Proceedings Volume 2141, (1994) https://doi.org/10.1117/12.176853

KEYWORDS: Thin films, Gallium arsenide, Absorption, Quantum wells, Anisotropy, Temperature metrology, Thermography, Glasses, Polarization, Birefringence

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