Single-mode AlGaAs/InGaAs/GaAs lasers with a narrow waveguide

Sergey O. Slipchenko; Ilya S. Shashkin; Viktor V. Shamakhov; Dmitry N. Nikolaev; Dmitrii A. Veselov; Yulia K. Bobretsova; Andrei V. Lyutetskiy; Nikita A. Pikhtin; Peter S. Kop’ev

doi:10.1117/12.2546240

2 March 2020 Single-mode AlGaAs/InGaAs/GaAs lasers with a narrow waveguide

Sergey O. Slipchenko, Ilya S. Shashkin, Viktor V. Shamakhov, Dmitry N. Nikolaev, Dmitrii A. Veselov, Yulia K. Bobretsova, Andrei V. Lyutetskiy, Nikita A. Pikhtin, Peter S. Kop’ev

Author Affiliations +

Proceedings Volume 11274, Physics and Simulation of Optoelectronic Devices XXVIII; 112742C (2020) https://doi.org/10.1117/12.2546240
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The design of the AlGaAs/InGaAs/GaAs laser heterostructure with an ultra-narrow waveguide was developed and studies on the generation of high-power laser pulses with high beam quality were carried out. The heterostructure design included a 100-nm-thick waveguide and an InGaAs quantum well for a lasing at 1060 nm. For the studies the mesa-stripe geometry single-mode lasers with a 5.1-μm-width contact were fabricated. The mesa-stripe geometry parameters were optimized using a 2D-simulation of waveguide properties, taking into account the spatial distribution of temperature and gain. As a result, the divergence was of 18.5 and 5 degrees in the growth direction and parallel to the heterostructure layers, respectively. Studies of the light-current characteristics in the range of pulse durations of 5–1000 ns showed that the peak power of 1.75 W was limited by the catastrophic optical damage. The dynamics is associated with modes of high-quality factor that approach their threshold conditions at high pumping level. A spectral line of these modes is redshifted relative to a fundamental one.

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Sergey O. Slipchenko, Ilya S. Shashkin, Viktor V. Shamakhov, Dmitry N. Nikolaev, Dmitrii A. Veselov, Yulia K. Bobretsova, Andrei V. Lyutetskiy, Nikita A. Pikhtin, and Peter S. Kop’ev "Single-mode AlGaAs/InGaAs/GaAs lasers with a narrow waveguide", Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112742C (2 March 2020); https://doi.org/10.1117/12.2546240

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