Interfacial SnO2 formation limits the photovoltage in α-SnWO4/NiOx photoanodes prepared by pulsed laser deposition

Patrick Schnell; Moritz Kölbach; Markus Schleuning; Keisuke Obata; Rowshanak Irani; Ibbi Y. Ahmet; Moussab Harb; David E. Starr; Roel Van de Krol; Fatwa F. Abdi

doi:10.1117/12.2568718

21 August 2020 Interfacial SnO₂ formation limits the photovoltage in α-SnWO₄/NiO_x photoanodes prepared by pulsed laser deposition

Patrick Schnell, Moritz Kölbach, Markus Schleuning, Keisuke Obata, Rowshanak Irani, Ibbi Y. Ahmet, Moussab Harb, David E. Starr, Roel Van de Krol, Fatwa F. Abdi

Author Affiliations +

Proceedings Volume 11496, New Concepts in Solar and Thermal Radiation Conversion III; 114960K (2020) https://doi.org/10.1117/12.2568718
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

Recent study demonstrated that the performance of α-SnWO₄/NiO_x photoabsorbers prepared by pulsed laser deposition (PLD) is limited by the interfacial properties; ^[1] understanding this interface is therefore crucial for further improvement. A thorough α-SnWO₄/NiO_x interface investigation by means of hard X-ray photoelectron spectroscopy (HAXPES) is presented and correlated with photoelectrochemistry measurements. PLD NiO_x introduces strong upwards band bending (~500 meV) at the interface. However, photoemission spectra simulation indicates that at the same time a thin SnO₂ layer is formed at the interface. The implications of this SnO₂ layer to the interface junction properties and the limited photovoltage will be discussed. ^[1] Kölbach et al. Chem Mater. 30 (2018) 8322-8331

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Patrick Schnell, Moritz Kölbach, Markus Schleuning, Keisuke Obata, Rowshanak Irani, Ibbi Y. Ahmet, Moussab Harb, David E. Starr, Roel Van de Krol, and Fatwa F. Abdi "Interfacial SnO₂ formation limits the photovoltage in α-SnWO₄/NiO_x photoanodes prepared by pulsed laser deposition", Proc. SPIE 11496, New Concepts in Solar and Thermal Radiation Conversion III, 114960K (21 August 2020); https://doi.org/10.1117/12.2568718

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