Recent study demonstrated that the performance of α-SnWO4/NiOx photoabsorbers prepared by pulsed laser deposition (PLD) is limited by the interfacial properties; [1] understanding this interface is therefore crucial for further improvement. A thorough α-SnWO4/NiOx interface investigation by means of hard X-ray photoelectron spectroscopy (HAXPES) is presented and correlated with photoelectrochemistry measurements. PLD NiOx introduces strong upwards band bending (~500 meV) at the interface. However, photoemission spectra simulation indicates that at the same time a thin SnO2 layer is formed at the interface. The implications of this SnO2 layer to the interface junction properties and the limited photovoltage will be discussed. [1] Kölbach et al. Chem Mater. 30 (2018) 8322-8331
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