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9 March 2021 Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping
Tomoyuki Tanikawa, Mayuko Tsukakoshi, Masahiro Uemukai, Ryuji Katayama
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861Z (2021) https://doi.org/10.1117/12.2584794
Event: SPIE OPTO, 2021, Online Only
Abstract
We present principle of defect characterization of GaN using multiphoton-excitation photoluminescence and several experimental results. Threading dislocations and basal plane dislocations in n-type GaN are observed from near-band-edge emission imaging. The diameters of dark spots and dark lines are determined by the minority carrier diffusion length. Three-dimensional feature of dark lines is different by the Burgers vectors of dislocations. Based on these properties, nondestructive classification of dislocations is possible. Simultaneous detection of near-band-edge emission and yellow luminescence can be utilized to visualize three-dimensional growth processes such as facet-initiated epitaxial lateral overgrowth, which is used to obtain GaN substrates with low threading dislocation densities.
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Tomoyuki Tanikawa, Mayuko Tsukakoshi, Masahiro Uemukai, and Ryuji Katayama "Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861Z (9 March 2021); https://doi.org/10.1117/12.2584794
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KEYWORDS
Gallium nitride
Luminescence
Nondestructive evaluation
Epitaxial lateral overgrowth
3D image processing
Absorption
Diffusion
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