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5 March 2021 Self-assembled growth of size-controlled InGaN quantum dots for LEDs
Jonathan J. Wierer, Syed Ahmed Al Muyeed, Xiongliang Wei, Damir Borovac, Haotian Xue, Renbo Song, Nelson Tansu
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Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 1170606 (2021) https://doi.org/10.1117/12.2585038
Event: SPIE OPTO, 2021, Online Only
Abstract
Controlled growth and increased radiative recombination rates of InGaN quantum dots (QDs) are demonstrated. The InGaN QDs are grown by a self-assembly (SA) method using metal-organic chemical vapor deposition on planar GaN and photoelectrochemically (PEC) etched InGaN QD templates. The PEC QD templates are formed from InGaN layers with a coherent source, which results in controlled QD sizes, and are capped and planarized with AlGaN/GaN layers. The PEC QDs behave as seeds via localizing strain near the QDs, which provide improved control of the SA QD growth. The SA QDs grown on PEC QD templates are smaller and have controlled sizes. Multiple quantum dots, consisting of 4 periods of SA QDs and AlGaN/GaN barrier layers, grown on PEC QD templates have higher radiative recombination rates. The higher rates are a result of the controlled and smaller-sized SA QDs. Forming SA QDs on PEC QDs templates can enhance the performance of InGaN-based QD emitters.
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Jonathan J. Wierer, Syed Ahmed Al Muyeed, Xiongliang Wei, Damir Borovac, Haotian Xue, Renbo Song, and Nelson Tansu "Self-assembled growth of size-controlled InGaN quantum dots for LEDs", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 1170606 (5 March 2021); https://doi.org/10.1117/12.2585038
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KEYWORDS
Indium gallium nitride
Quantum dots
Gallium nitride
Light emitting diodes
Absorption
Etching
Chemical vapor deposition
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