High power laser diode emitted at 2μm

Hongguang Yu; Chengao Yang; Yihang Chen; Tianfang Wang; Jianmei Shi; Yu Zhang; Yingqiang Xu; ZhiChuan Niu

doi:10.1117/12.2651536

15 December 2022 High power laser diode emitted at 2μm

Hongguang Yu, Chengao Yang, Yihang Chen, Tianfang Wang, Jianmei Shi, Yu Zhang, Yingqiang Xu, ZhiChuan Niu

Proceedings Volume 12478, Thirteenth International Conference on Information Optics and Photonics (CIOP 2022); 124780T (2022) https://doi.org/10.1117/12.2651536
Event: Thirteenth International Conference on Information Optics and Photonics (CIOP 2022), 2022, Xi'an, China

Abstract

GaSb-based InGaSb/AlGaAsSb double quantum well separate confinement heterostructure laser diodes had been grown by molecular-beam-epitaxy. 1000×100 μm² stripe-type waveguide LDs with facets coated were fabricated and characterized. The high output power of 1.107 W and peak wavelength of 2.09 μm had got with injected current 5 A at working temperature 20℃. The maximum wall plug efficiency was 28.8% with injection current 0.55 A.

Citation Download Citation

Hongguang Yu, Chengao Yang, Yihang Chen, Tianfang Wang, Jianmei Shi, Yu Zhang, Yingqiang Xu, and ZhiChuan Niu "High power laser diode emitted at 2μm", Proc. SPIE 12478, Thirteenth International Conference on Information Optics and Photonics (CIOP 2022), 124780T (15 December 2022); https://doi.org/10.1117/12.2651536

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