EUV pellicle technology for high volume wafer production

Yun-Yao Lin; Pei-Hsun Tsai; Kelvin Elphick; Ching-Ho Hsu; Dino K. L. Shieh; Feng Hao Chang; James C. C. Huang; Jerry C. Y. Chen; Vincent C. W. Wen

doi:10.1117/12.2688127

21 November 2023 EUV pellicle technology for high volume wafer production

Yun-Yao Lin, Pei-Hsun Tsai, Kelvin Elphick, Ching-Ho Hsu, Dino K. L. Shieh, Feng Hao Chang, James C. C. Huang, Jerry C. Y. Chen, Vincent C. W. Wen

Author Affiliations +

Proceedings Volume 12750, International Conference on Extreme Ultraviolet Lithography 2023; 127500N (2023) https://doi.org/10.1117/12.2688127
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

EUV lithography is a key technology in the semiconductor industry and using pellicle that protects reticle from contamination during lithography process has become increasingly important. In this paper, different types of pellicles showing 82~>95% EUV transmittance and wafer moves 5K~50k under different transmittances, scanner powers and resists have been demonstrated for high volume wafer production at this work. For pellicle particle quality, we developed new inspection tool to achieve >1um pinhole-free and with significant defectivity reduction compared to previous one. Almost no fall-on rate is validated for real wafer production. Furthermore, this work develops full infrastructure, which include pellicle-making, pellicle-mounting and through pellicle inspection are validated to provide simple and robust production capability. Our EUV pellicle frame design shows fully compatibility with advanced 193nm reticle pelliclemounting process. Now previous EUV pellicle solution is ready to support advanced nodes application. The other key indices for high wafer throughput and cost reduction are high pellicle transmittance and durability. The pellicle optical performances (EUV transmittance, EUVT uniformity and EUV reflectance) are comparable to the previous solution. Moreover, no negative effects on wafer critical dimension uniformity (CDU) regarding to mask with and without pellicle mounting. In this work, a high-volume manufacturing (HVM) EUV pellicle with excellent defect and durability have been successfully qualified for the needs of advanced node productions.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yun-Yao Lin, Pei-Hsun Tsai, Kelvin Elphick, Ching-Ho Hsu, Dino K. L. Shieh, Feng Hao Chang, James C. C. Huang, Jerry C. Y. Chen, and Vincent C. W. Wen "EUV pellicle technology for high volume wafer production", Proc. SPIE 12750, International Conference on Extreme Ultraviolet Lithography 2023, 127500N (21 November 2023); https://doi.org/10.1117/12.2688127

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available