Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy

Dipankar Pramanik; Vivek Jain

doi:10.1117/12.51018

1 December 1991 Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy

Dipankar Pramanik, Vivek Jain

Author Affiliations +

Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51018
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

A Focussed Ion beam Microscope has been used to image the grains as well voids formed in Al- 1%Cu/TiW fine line conductors . Void formation has been compared between laser annealed Al and non laser annealed Al and it has been shown that the laser annealed Al is more prone to voiding. A TiW layer placed over the Al is effective in suppressing the voids.

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Dipankar Pramanik and Vivek Jain "Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); https://doi.org/10.1117/12.51018

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