Simple model of electromagnetic-wave-induced avalanching in semiconductors

Maurice Weiner; Lawrence E. Kingsley; A. H. Kim; Robert J. Youmans

doi:10.1117/12.146547

9 June 1993 Simple model of electromagnetic-wave-induced avalanching in semiconductors

Maurice Weiner, Lawrence E. Kingsley, A. H. Kim, Robert J. Youmans

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146547
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

A simple transmission line model, which seeks to explain phenomena associated with avalanche/displacement current waves in semiconductors, is discussed. The model relies on breaking up the semiconductor drift space into small cells, each of which contains a transmission line element so as to allow an electromagnetic wave to propagate away from the generated plasma. The transmission line element also serves as the energy storage element. A time varying resistor controls the conductivity, induced by either a light signal or an avalanche. As expected, the model points out the importance of triggering an avalanche/displacement current wave in regions where the static field is high. Under certain conditions the model predicts a growing electromagnetic wave with sufficient amplitude to sustain avalanching. The model offers a possible explanation of the observed fast risetime pulses resulting from either optical or avalanche excitation of a small, spatially limited region of the semiconductor region.

Citation Download Citation

Maurice Weiner, Lawrence E. Kingsley, A. H. Kim, and Robert J. Youmans "Simple model of electromagnetic-wave-induced avalanching in semiconductors", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146547

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