Modeling of fast conductivity phenomena in semiconductors

Maurice Weiner; Lawrence E. Kingsley; Terrence Burke; Kevin Fonda; Robert J. Youmans; Hardev Singh; Robert A. Pastore Jr.

doi:10.1117/12.198666

4 January 1995 Modeling of fast conductivity phenomena in semiconductors

Maurice Weiner, Lawrence E. Kingsley, Terrence Burke, Kevin Fonda, Robert J. Youmans, Hardev Singh, Robert A. Pastore Jr.

Author Affiliations +

Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198666
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

A simple transmission line model, which seeks to explain fast conductivity phenomena in semiconductors, such as photoconductivity or avalanching (induced by either light or displacement current waves), is proposed. The model relies on breaking up the semiconductor drift space into small cells, each of which contains an imaginary transmission line element so as to allow an electromagnetic wave to propagate away from the generated plasma. The same transmission line may be used to convey light energy produced in the semiconductor. The transmission line also serves as the energy storage element. Time varying nodal resistors, located at the transmission line junctions, control the conductivity. The nodal resistors embody the physics of the semiconductor, whereas the transmission line matrix accounts for energy spread. Slower semiconductor mechanisms, such as carrier drift, may be easily incorporated into the formalism, if necessary. The model points out the importance of triggering either an avalanche or displacement current wave in regions where the static field is high. Under certain conditions the model predicts a growing electromagnetic wave with sufficient amplitude to sustain avalanching.

Citation Download Citation

Maurice Weiner, Lawrence E. Kingsley, Terrence Burke, Kevin Fonda, Robert J. Youmans, Hardev Singh, and Robert A. Pastore Jr. "Modeling of fast conductivity phenomena in semiconductors", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); https://doi.org/10.1117/12.198666

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