Paper
14 May 2004 Surface conditioning solutions to reduce resist line roughness
Peng Zhang, Manuel Jaramillo Jr., Madhukar B. Rao, Colin Yates, Danielle M. King, Brenda F. Ross, Bridget L. O'Brien
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Abstract
In this study, surface conditioning solutions were used during post-develop process to enhance the 193 nm lithography performance. These solutions were applied to the wafer surface in a surface treatment step between the DI water rinse and drying steps. Compared to the standard develop process, the formulated surface conditioning solution enabled a 24% reduction in line width roughness, particularly in the high frequency roughness components. The solution also improved the pattern collapse performance by enlarging the non-collapse window and extending the minimum CD feature size by 10 nm. Additional benefits provided by the formulated surface conditioner solution were minimal changes to CD and resist profile.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Zhang, Manuel Jaramillo Jr., Madhukar B. Rao, Colin Yates, Danielle M. King, Brenda F. Ross, and Bridget L. O'Brien "Surface conditioning solutions to reduce resist line roughness", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535819
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Line edge roughness

Chemistry

Image processing

Spatial frequencies

Critical dimension metrology

Lithography

Photoresist processing

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