Dr. Peng Zhang Profile

Dr. Peng Zhang

R&D Director at Air Liquide Advanced Materials Inc

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Author

Publications (13)

Proceedings Article | 29 March 2006 Paper

Formulated surface conditioners to enhance the non-collapse window and maintain defect control: a bi-functional approach for sub-100-nm lithography

Masakazu Sanada, Minoru Sugiyama, Manuel Jaramillo, Peng Zhang, Shawn Cassel

Proceedings Volume 6153, 615331 (2006) https://doi.org/10.1117/12.656661

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Critical dimension metrology, Lithography, Photoresist processing, Optical proximity correction, Manufacturing, Reticles, Wafer-level optics, Control systems

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Proceedings Article | 29 March 2006 Paper

Post-etch LER performance of novel surface conditioner solutions

P. Zhang, M. Jaramillo, S. Cassel, T. Wallow, A. Acheta, A. Pawloski, S. Bell, R. Kim

Proceedings Volume 6153, 61533Y (2006) https://doi.org/10.1117/12.656648

KEYWORDS: Line edge roughness, Etching, Semiconducting wafers, Line width roughness, Photoresist processing, Lithography, Plasma, Critical dimension metrology, Scanning electron microscopy, Plasma etching

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Proceedings Article | 29 March 2006 Paper

Linewidth roughness reduction at the 55 nm node through combination of classical process optimization and application of surface conditioner solutions

Patrick Wong, Wendy Gehoel, Stephan Sinkwitz, Peng Zhang, Manuel Jaramillo, Madhukar Rao, Bridget Horvath, Brenda Ross, Shawn Cassel

Proceedings Volume 6153, 61533V (2006) https://doi.org/10.1117/12.657875

KEYWORDS: Line width roughness, Electroluminescence, Semiconducting wafers, Image processing, Scanners, Platinum, Scanning electron microscopy, Critical dimension metrology, Image resolution, Resist chemistry

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Proceedings Article | 23 March 2006 Paper

Increasing effective resolution through surface conditioners for 1x imprint templates and photo mask applications beyond 65nm

Kosta Selinidis, John Maltabes, Madhukar Rao, Peng Zhang

Proceedings Volume 6151, 615114 (2006) https://doi.org/10.1117/12.657620

KEYWORDS: Photomasks, Photoresist processing, Etching, Manufacturing, Resolution enhancement technologies, Capillaries, Lithography, Semiconducting wafers, Mask making, Liquids

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Proceedings Article | 12 May 2005 Paper

High refractive index immersion fluids for 193 nm immersion lithography

Bridgette Budhlall, Gene Parris, Peng Zhang, Xiaoping Gao, Zarka Zarkov, Brenda Ross, Simon Kaplan, John Burnett

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600025

KEYWORDS: Refractive index, Absorbance, Water, Photoresist materials, Immersion lithography, Absorption, Microfluidics, Ultraviolet radiation, Semiconducting wafers, Fluid dynamics

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Proceedings Article | 10 May 2005 Paper

Distance-based standard deviation analysis method for line width roughness data

Thomas Bzik, Madhukar Rao, Peng Zhang

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599987

KEYWORDS: Statistical analysis, Distance measurement, Line width roughness, Error analysis, Data modeling, Semiconducting wafers, Chemical analysis, Reliability, Statistical modeling, Arsenic

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Linewidth roughness (LWR) is a major challenge for 90nm node and below. As feature sizes decrease, the reliable measurement, statistical comparison and interpretation of LWR data become increasingly important. The reliability of all LWR statistical analysis methods are strongly impacted by the architecture of LWR data being analyzed. Some of the key structural aspects of the collected data include: measurement box size, distance between neighboring measurements and whether measurement boxes have been "stitched" together for analysis. Additionally, the true nature of underlying line width variation, including both cyclical and non-cyclical trends, impacts how reliable a given interpretation will be. Current statistical methodologies for linewidth data are oriented at estimation of the frequency and scale of cyclical variation in linewidth components. Fourier analysis is traditionally applied for this purpose. Such analyses assume both that there is a cyclical component (e.g., sinusoidal) or components in the data to be modeled, as well as implicitly assuming a Gaussian error distribution for the linewidth variation that remains after modeling. The assumption that Fourier analysis is appropriate for LWR data often not met in practice by the LWR data undergoing analysis. A more model-independent approach, distance-based standard deviations, is proposed for use as part of an LWR statistical analysis methodology. It is based on the calculation of local standard deviations of linewidth for all possible distances between measured points. This methodology permits the statistical comparison of linewidth roughness over any distance of interest and makes efficient use of all data for a given measurement box length. It can determine the minimum measurement box length required to capture all linewidth variation. In addition, the method can confirm the validity of line stitching to increase measurement box size, and locate the sources of variance in the overall LWR value (e.g. line-to-line vs. within line). This new method is an effective alternative to established methods for the statistical evaluation of linewidth data. The new statistical technique will be illustrated on linewidth data (measured in μm) obtained from CDSEM measurements.

Proceedings Article | 4 May 2005 Paper

Pattern collapse and line width roughness reduction by surface conditioner solutions for 248-nm lithography

Peng Zhang, Madhukar Rao, Manuel Jaramillo, Bridget Horvath, Brenda Ross, Ted Paxton, Todd Davis, Pat Cook, David Witko

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600066

KEYWORDS: Line width roughness, Lithography, Critical dimension metrology, Photoresist materials, Water, Photoresist processing

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Proceedings Article | 4 May 2005 Paper

Advanced rinse process alternatives for reduction of photolithography development cycle defects

Nickolas Brakensiek, Peng Zhang, Danielle King, Craig Ghelli

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598819

KEYWORDS: Semiconducting wafers, Diffractive optical elements, Photoresist materials, Photoresist developing, Particles, Optical lithography, Coating, Control systems, Liquids, Wafer testing

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Proceedings Article | 4 May 2005 Paper

Combined pattern collapse and LWR control at the 70 nm node through application of novel surface conditioner solutions

Peng Zhang, Manuel Jaramillo, Madhukar Rao, Brenda Ross, Bridget Horvath, Patrick Wong, Wendy Gehoel, Stephan Sinkwitz

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600039

KEYWORDS: Line width roughness, Semiconducting wafers, Lithography

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Proceedings Article | 14 May 2004 Paper

Surface conditioning solutions to reduce resist line roughness

Peng Zhang, Manuel Jaramillo, Madhukar Rao, Colin Yates, Danielle King, Brenda Ross, Bridget O'Brien

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535819

KEYWORDS: Line edge roughness, Image processing, Chemistry, Spatial frequencies, Lithography, Polymers, Photoresist processing, Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers

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Proceedings Article | 14 May 2004 Paper

Surface conditioning solutions for pattern collapse reduction

Peng Zhang, Manuel Jaramillo, Danielle King, Madhukar Rao, Bridget O'Brien, Brenda Ross

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535283

KEYWORDS: Process control, Photoresist processing, Optical lithography, Semiconducting wafers, Control systems, Scanners, Capillaries, Liquids, Manufacturing, Standards development

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Proceedings Article | 12 June 2003 Paper

Impact of surfactant in developer on CD performance

Peng Zhang, Manuel Jaramillo, Danielle King, Thomas Markley, Zarka Zarkov, David Witko, Ted Paxton, Todd Davis

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485125

KEYWORDS: Critical dimension metrology, Polymers, Semiconducting wafers, Photoresist developing, Foam, Crystals, Deep ultraviolet, Photoresist materials, Polymer thin films, Scanners

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Proceedings Article | 12 June 2003 Paper

Impact of surfactant in developer and rinse solution on 193-nm lithography performance

Peng Zhang, Manuel Jaramillo, Danielle King, Brenda Ross, David Witko, Ted Paxton, Todd Davis

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485170

KEYWORDS: Critical dimension metrology, Lithography, Semiconducting wafers, Photoresist processing, Interfaces, Capillaries, Photoresist materials, Photoresist developing, 193nm lithography, Reticles

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Showing 5 of 13 publications

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