Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices

Nima Nader Esfahani; Robert E. Peale; Walter R. Buchwald; Joshua R. Hendrickson; Justin W. Cleary

doi:10.1117/12.2006137

27 March 2013 Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices

Nima Nader Esfahani, Robert E. Peale, Walter R. Buchwald, Joshua R. Hendrickson, Justin W. Cleary

Author Affiliations +

Proceedings Volume 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI; 86240Q (2013) https://doi.org/10.1117/12.2006137
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Recent progress in the investigation of millimeter-wave and THz detectors based on plasmon excitation in the twodimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) is reported. A tunable resonant polarized photoresponse to mm-wave radiation in the frequency range of 40 to 110 GHz is demonstrated for a gratinggated InGaAs/InP based device. The gate consisted of a metal grating with period of 9 μm specifically designed for excitation of sub-THz plasmons. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. This resonant change in channel conductance enables potential applications in chip-scale frequency-agile detectors, which can be scaled to mid-THz frequencies.

Citation Download Citation

Nima Nader Esfahani, Robert E. Peale, Walter R. Buchwald, Joshua R. Hendrickson, and Justin W. Cleary "Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 86240Q (27 March 2013); https://doi.org/10.1117/12.2006137

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