Tunable excitation of two-dimensional plasmon modes in InGaAs/InP HEMT devices for terahertz detection

Nima Nader Esfahani; Xin Qiao; Robert E. Peale; Walter R. Buchwald; Joshua R. Hendrickson; Justin W. Cleary

doi:10.1117/12.2037062

31 January 2014 Tunable excitation of two-dimensional plasmon modes in InGaAs/InP HEMT devices for terahertz detection

Nima Nader Esfahani, Xin Qiao, Robert E. Peale, Walter R. Buchwald, Joshua R. Hendrickson, Justin W. Cleary

Author Affiliations +

Proceedings Volume 8993, Quantum Sensing and Nanophotonic Devices XI; 89930F (2014) https://doi.org/10.1117/12.2037062
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

THz electromagnetic waves resonantly excite plasmons in the two dimensional electron gas (2DEG) of high electron mobility transistors (HEMTs) via grating-gate couplers. These excitations can induce measureable photoresponse. Biasing the grating gate tunes the photoresponse via control of 2DEG carrier density. Plasmons are investigated here in an InGaAs/InP HEMT with a 9 μm period grating gate at 78 and 106 GHz free-space radiation and 4K sample temperature. The dependence of the photoresponse on applied Source-Drain bias is also investigated. The minimum noise equivalent power (NEP) is estimated to be 113 pW/Hz^1/2 , with maximum responsivity of 200 V/W. Such plasmonic alterations in channel conductance provide a means for voltage-tunable THz and sub-THz detectors or filters.

Citation Download Citation

Nima Nader Esfahani, Xin Qiao, Robert E. Peale, Walter R. Buchwald, Joshua R. Hendrickson, and Justin W. Cleary "Tunable excitation of two-dimensional plasmon modes in InGaAs/InP HEMT devices for terahertz detection", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930F (31 January 2014); https://doi.org/10.1117/12.2037062

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