Resolution characteristics of graded doping and graded composition reflection-mode AlGaAs/GaAs photocathodes

Wenjuan Deng; Daoli Zhang; Jijun Zou; Xincun Peng; Weilu Wang; Yijun Zhang; Benkang Chang

doi:10.1117/12.2216219

5 November 2015 Resolution characteristics of graded doping and graded composition reflection-mode AlGaAs/GaAs photocathodes

Wenjuan Deng, Daoli Zhang, Jijun Zou, Xincun Peng, Weilu Wang, Yijun Zhang, Benkang Chang

Author Affiliations +

Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 97951X (2015) https://doi.org/10.1117/12.2216219
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China

Abstract

The resolution model of graded doping and graded composition reflection-mode AlGaAs/GaAs photocathode is solved numerically from the two-dimensional continuity equations. According to the model, the theoretical modulation transfer functions (MTFs) of different structure reflection-mode photocathodes were calculated, and the effects of doping concentration, Al composition, AlGaAs and GaAs layer thickness on the resolution of cathodes were analyzed. The simulation results show that both graded composition and graded doping structures can increase the resolution of photocathode, and the effect of graded composition structure is more pronounced. The resolution improvement is attributed to the built-in electric field induced by a graded composition or doping structure. The simulation results also show that the MTFs of cathodes are affected by the AlGaAs and GaAs layer thickness.

Citation Download Citation

Wenjuan Deng, Daoli Zhang, Jijun Zou, Xincun Peng, Weilu Wang, Yijun Zhang, and Benkang Chang "Resolution characteristics of graded doping and graded composition reflection-mode AlGaAs/GaAs photocathodes", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97951X (5 November 2015); https://doi.org/10.1117/12.2216219

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