Layer transfer technique of epitaxial (00l) oriented rutile TiO2 films sputtered on sapphire substrates using epitaxial ZnO sacrificial layer was developed. It was demonstrated that obtaining an epitaxial structure for rutile layer transfer can be challenging, due to required control of variety of parameters – surface roughness, growth rate, deposition temperature, interface stresses and lattice matching. It was shown that ZnO, directly grown on M-sapphire substrates, promotes polycrystalline rutile growth. Therefore, 50 nm thick (00l) rutile seed layer with controlled surface roughness grown on M-sapphire substrate was needed to promote the epitaxial (101" 3) ZnO growth, which then allowed to obtain epitaxial (00l) rutile layer suitable for the layer transfer process. The examined structural quality, evaluated by means of X-ray diffraction and Raman spectroscopy, showed that the transferred rutile films exhibit promising properties for photonic applications.
KEYWORDS: Device simulation, Sensors, Diodes, Energy harvesting, Energy harvesting, Oscillators, Device simulation, Capacitors, Transducers, Switches, Transistors, Control systems
This paper deals with the design, the modeling and the simulation of two electrical circuits devoted to kinetic piezoelectric energy harvesters for powering distributed control cells. Two schemes are proposed, analyzed and discussed: the first is a based on classical electrical stages, and the second integrates a novel multiplier/rectifier stage which permits to reduce the voltage loss. Simulation and experimental tests are carried out and demonstrate the advantage of the second scheme relative to the first one.
Epitaxial LiNbO3 thin films were deposited on C-sapphire substrates by pulsed injection metal organic chemical vapor deposition and atmospheric pressure metal organic chemical vapor deposition. The effect of deposition conditions, such as the ratio of Li/Nb precursors in solution and the deposition pressure, on the phase composition, Li nonstoichiometry, texture, epitaxial quality, residual stresses and formation of twins in LiNbO3 films was studied by means of X-ray diffraction and Raman spectroscopy. It was found that the deposition pressure played an important role in the incorporation of Li2O in the film and the formation of in-plane and out-of-plane twins.
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