Mr. Craig A. West Profile

Craig A. West

Sr. Member Technical Staff at Tekscend Photomask US Inc

SPIE Involvement:

Author

Proceedings Article | 4 April 2011 Paper

Extending analog design scaling to sub-wavelength lithography: co-optimization of RET and photomasks

Ashesh Parikh, Siew Dorris, Tom Smelko, Walter Walbrick, Pushpa Mahalingam, John Arch, Kent Green, Vishal Garg, Peter Buck, Craig West

Proceedings Volume 7974, 79740N (2011) https://doi.org/10.1117/12.877487

KEYWORDS: Photomasks, Reticles, Deep ultraviolet, Analog electronics, Silicon, Optical proximity correction, Critical dimension metrology, Lithography, Resolution enhancement technologies, CMOS technology

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Proceedings Article | 25 May 2010 Paper

New type of haze formation on masks fabricated with Mo-Si blanks

E. Foca, A. Tchikoulaeva, B. Sass, C. West, P. Nesladek, R. Horn

Proceedings Volume 7748, 774811 (2010) https://doi.org/10.1117/12.864478

KEYWORDS: Air contamination, Quartz, Photomasks, Inspection, Ions, Chemical analysis, Scanning electron microscopy, Nitrogen, Data modeling, Oxidation

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Proceedings Article | 17 October 2008 Paper

Technology interactions on reticle delivery

Paul Ackmann, Scott Goad, Craig West

Proceedings Volume 7122, 712234 (2008) https://doi.org/10.1117/12.801239

KEYWORDS: Reticles, Optical proximity correction, Photomasks, Resolution enhancement technologies, Semiconducting wafers, Lithography, Modulation, Logic, Calibration, Product engineering

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Proceedings Article | 17 October 2008 Paper

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

Kurt Kimmel, Ingo Hoellein, Jan Hendrick Peters, Paul Ackmann, Brid Connolly, Craig West

Proceedings Volume 7122, 712219 (2008) https://doi.org/10.1117/12.801685

KEYWORDS: Photomasks, Semiconducting wafers, Scanners, Inspection, Wafer inspection, Critical dimension metrology, Printing, Metrology, Manufacturing, Defect inspection

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Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

Proceedings Article | 20 October 2006 Paper

Optical issues of thin organic pellicles in 45-nm and 32-nm immersion lithography

Kevin Lucas, Joseph Gordon, Will Conley, Mazen Saied, Scott Warrick, Mike Pochkowski, Mark Smith, Craig West, Franklin Kalk, Jan Pieter Kuijten

Proceedings Volume 6349, 63490K (2006) https://doi.org/10.1117/12.686741

KEYWORDS: Pellicles, Optical proximity correction, Apodization, Polarization, Critical dimension metrology, Lithography, Photomasks, Semiconducting wafers, Reticles, Spatial frequencies

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Proceedings Article | 28 May 2004 Paper

Study of OPC for AAPSM reticles using various mask fabrication techniques

Gregory Hughes, Denny Kamaruddin, Kent Nakagawa, Susan MacDonald, Bill Wilkinson, Craig West, Keuntaek Park

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536138

KEYWORDS: Photomasks, Semiconducting wafers, Data modeling, Optical proximity correction, Etching, Mask making, Photoemission spectroscopy, Image analysis, Chromium, Reticles

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Proceedings Article | 11 March 2002 Paper

Verification of the effect of mask bias on the mask error enhancement factor of contact holes

Michael Reilly, Stewart Robertson, Colin Parker, Doris Kang, Mircea Dusa, Susan MacDonald, Craig West

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.443111

KEYWORDS: Photomasks, Binary data, Scanning electron microscopy, Optical testing, Nanoimprint lithography, Image quality, Phase shifts, Image enhancement, Metrology, Semiconducting wafers

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Proceedings Article | 5 July 2000 Paper

OPC beyond 0.18 mm: OPC on PSM gates

Franklin Schellenberg, Olivier Toublan, Nicolas Cobb, Emile Sahouria, Greg Hughes, Susan MacDonald, Craig West

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388942

KEYWORDS: Photomasks, Reticles, Optical proximity correction, Phase shifts, Phase shifting, Semiconducting wafers, Lithography, Manufacturing, Phase measurement, Etching

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Showing 5 of 8 publications

Conference Committee Involvement (2)

Photomask Technology

18 September 2007 | Monterey, California, United States

Photomask Technology

19 September 2006 | Monterey, California, United States

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