We have developed a high-resolution x-ray microscope with spatial resolution better than 100 nm. The utilized x-ray energy of the microscope is 17.5 keV that can penetrate through standard silicon substrate and enables to observe embedded nanoscale metal structure and defects, nondestructively. We have applied the present x-ray microscope for investigating 3D flash memory devices and observed precise metal filling structure in there. In addition, defects in the circuit area were also found.
To control the HAR (High Aspect Ratio) processes for producing 3D memories, a non-destructive and highly accurate measurement method is required. We report simulation results of T-SAXS (Transmission Small Angle X-ray Scattering) measurability analysis to evaluate its measurement capability of profile parameters for typical HAR structures. After that, we discuss T-SAXS extensibility for profile measurements of future 3D memories, based on measurability analysis for various HAR structural models by varying their structural parameters. For the deep depth region which is important for the future 3D memory shape measurement, we confirmed that the HAR structure with its depth = 30 μm can be measured under the assumed criteria of precision < 1%.
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