Silicon photonic modulators are a key component for electro-optic transmitter within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in Mach-Zehnder interferometer have become the most popular solution. Accumulation–based capacitive modulators are an efficient approach, which can reduce the modulation power consumption. In this work we study the behavior of capacitive modulators with polycrystalline silicon to form the capacitance. The modulators are made within the standard fabrication flow with only few add-ons. In this work we show that furnace annealing conditions and excimer laser annealing conditions during the polycrystalline silicon formation enhance the modulator bandwidths.
We present an optical phased array parameter analysis for automotive and handheld device applications and preliminary results from a 1×16 silicon optical phased array using p-i-n phase shifters built on a 300-mm industrial platform to reach high-speed operation and low power consumption at a 1.55𝜇𝑚 wavelength. Using 2 𝜇𝑚-spaced grating antennas OPA with theoretical beam steering range of 48°, we demonstrate a beam steering range of ±4° while average power consumption after the beam-shape optimization is measured to be 12.6 mW. Experimental setup, beam forming and scanning are discussed and a final analysis on future large-scale OPA integration is made.
Over the last decade, Optical Phased Arrays (OPA) have been extensively studied, targeting applications such as Light Detection And Ranging (LiDAR) systems, holographic displays, atmospheric monitoring and free space communications. Leveraging the maturity of the silicon photonics platform, the usual mechanical based beam steering system could be replaced by an integrated OPA; significantly reducing the cost and size of the LiDAR while improving its performance (scanning speed, power efficiency, resolution…) thanks to solid state beam steering. However, the realization of an OPA that meets the specifications of a LiDAR system (low divergence and single output beam) is not trivial. Targeting the realization of a complete LiDAR system, the technical challenges inherent to the development of high performance OPAs have been studied at CEA LETI. In particular, efficient genetic algorithms have been developed for the calibration of high channel count OPAs as well as an advanced measurement setup compatible with wafer-scale OPA characterization.
Silicon photonic modulators are a key component for electro-optic transmitters within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in a Mach-Zehnder interferometer (MZI) have become the most popular solution. Among the different electrical configurations, PN silicon modulators show a high bandwidth but at the price of a low efficiency. Accumulation–based capacitive modulators are an alternative, allowing to reduce the modulator power consumption. Additionally, strained SiGe exhibits a stronger plasma dispersion effect than silicon for holes. In this work we study the behavior of capacitive modulators with a thin layer of strained SiGe. The modulator fabrication process is based on the standard process flow with only few add-ons. In the first demonstration we show that the thin SiGe layer improved the modulator efficiency by 25%. In addition, further improvement is possible by optimization of the SiGe deposition condition to maximize the SiGe layer stress.
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