Manipulation of interfacial magnetism utilizing voltage pulses can lead to energy-efficient scalable nanomagnetic devices. Through voltage-controlled magnetic anisotropy (VCMA), we had previously shown the potential to achieve non-volatile magnetoresistive random-access memory (MRAM) technology that is 100 times more energy-efficient than commercially available spin-transfer torque MRAM [1]. Building on prior work on VCMA-based skyrmion-mediated reversal of ferromagnetic states and its scaling to 20 nm [2], we will present new experimental demonstrations of manipulation of skyrmions in magnetoionic heterostructures with an electric field. This talk will also focus on energy-efficient magnetoionic control of skyrmions in (Co/Ni)N-based heterostructures for memory application. Furthermore, our talk also demonstrates implementing physical reservoir computing, a neuromorphic process typically used for classifying and predicting temporal data, with the energy-efficient magnetoionic process.
References:
[1] Bhattacharya et al. ACS applied materials & interfaces, 10(20), 17455-17462 (2018).
[2] Rajib et al. Scientific reports, 11(1), 20914 (2021).
We present initial experimental results and simulate a nanomagnet reservoir computer (NMRC) solving tasks requiring high memory content, with an area-energy-delay product ten-million times lower than CMOS systems. We manufactured a small nanomagnet reservoir demonstrating a frustrated state. We evaluated the performance on two novel tasks. Our results indicate the reservoir’s short-term memory capabilities and ability to integrate information from multiple concurrent inputs. In the end, our system saw a reduction in area by a factor of 50,000, in energy by a factor of 60, and in period by a factor of four as compared with an equivalent CMOS reservoir.
Prevention of integrated circuit counterfeiting through logic locking faces the fundamental challenge of securing an obfuscation key against physical and algorithmic threats. Previous work has focused on strengthening the logic encryption to protect the key against algorithmic attacks but failed to provide adequate physical security. In this work, we propose a logic locking scheme that leverages the non-volatility of the nanomagnet logic (NML) family to achieve both physical and algorithmic security. Polymorphic NML minority gates protect the obfuscation key against algorithmic attacks, while a strain-inducing shield surrounding the nanomagnets provides physical security via a self-destruction mechanism, securing against invasive attacks. We experimentally demonstrate that shielded magnetic domains are indistinguishable, securing against imaging attacks. As NML suffers from low speeds, we propose a hybrid CMOS logic scheme with embedded obfuscated NML “islands”. The NML secures the functionality of sensitive logic while CMOS drives the timing-critical paths.
Electrical field control of magnetization in nanoscale magnets has the potential to be extremely energy efficient. We will discuss voltage-induced strain and acoustic wave switching of the magnetization as well as direct voltage control of magnetic anisotropy (VCMA) to control magnetic skyrmion states in nanomagnets with confined geometry.
We will then discuss various voltage-controlled nanoscale magnetic device proposals towards implementation of energy efficient, memory, deep neural networks whose synaptic weights can be reprogrammed online and reservoir computing devices that are amenable to online training. This could be a key enabling technology for edge computing in IOT devices.
Skyrmion manipulation with VCMA can lead to small footprint nanomagnetic memory [1-2]. This talk will focus on experimental demonstration of VCMA induced nonvolatile creation and annihilation of skyrmions in an antiferromagnet/ferromagnet/oxide heterostructure film. This could provide a pathway for using intermediate skyrmion states to enable robust magnetization reversal with VCMA. We will discuss its scaling to lateral dimensions below 50 nm, oscillations > 50 GHz and application to neuromorphic computing.
Skyrmion manipulation utilizing Voltage Control of Magnetic Anisotropy (VCMA) can lead to small footprint nanomagnetic memory devices [1-2]. This talk will focus on using intermediate skyrmion states [3] to enable robust and energy efficient magnetization reversal with VCMA in the presence of thermal noise and defects and its scaling to lateral dimensions below 50 nm. We further discuss experimental demonstration of VCMA induced nonvolatile creation and annihilation of skyrmions in an antiferromagnet/ferromagnet/oxide heterostructure film [4] by applying a few volts. This could provide a pathway to control single skyrmion in an MTJ device using VCMA.
In this work, the magnetoelectric cantilever composed of a layer of Galfenol and a layer of PZT-5H is studied for
novel applications such as surgical ablation tools and cutting tools for machining applications. For developing a
suitable model for the magnetoelectric cantilever, an energy based approach for the non-linear constitutive behavior of
the magnetostrictive material and linear piezoelectric constitutive equations will be coupled with Euler Bernoulli
model for composite beams. The cantilever is held in a uniform magnetic field and the magnetic field is measured by a
Gaussmeter. The tip-deflection of the cantilever is detected by a laser triangulation sensor. The piezoelectric response
can be studied with low noise preamplifier. Four PZT-5H layers with different thickness are separately bonded on the
top of the same Galfenol layer and characterized to study the thickness ratio effects on the quasistatic actuation and
sensing behavior of the composite cantilever.
This work investigates the equivalence of thermodynamic potentials utilizing stress-induced anisotropy energy
and potentials using elastic, magnetoelastic, and mechanical work energies. The former is often used to model
changes in magnetization and strain due to magnetic field and stress in magnetostrictive materials. The enthalpy
of a ferromagnetic body with cubic symmetry is written with magnetization and strain as the internal
states and the equilibrium strains are calculated by minimizing the enthalpy. Evaluating the enthalpy using
the equilibrium strains, functions of the magnetization orientation, results in an enthalpy expression devoid
of strain. By inspecting this expression, the magnetoelastic, elastic, and mechanical work energies are identified to be equivalent to the stress-induced anisotropy plus magnetostriction-induced fourth order anisotropy.
It is shown that as long as the value of fourth order crystalline anisotropy constant K1 includes the value of
magnetostriction-induced fourth order anisotropy constant ΔK1, energy formulations involving magnetoelastic,
elastic, and mechanical work energies are equivalent to those involving stress-induced anisotropy energy. Further,
since the stress-induced anisotropy is only given for a uniaxial applied stress, an expression is developed for a
general 3D stress.
This paper explores a unified energy-based approach to model the non-linear behavior of both
magnetostrictive and piezoelectric materials. While the energy-approach developed by Armstrong has been
shown to capture the magnetostrictive behavior of materials such as Terfenol-D1 and Iron-Gallium2 along
different crystallographic directions, extending this approach to piezoelectric materials presents a
considerable challenge. Some piezo-electric materials such as PMN-PT and BaTiO3 may undergo phase
changes under applied electric fields and stress in addition to polarization switching. A modeling approach
is developed in this paper to capture these effects. Finally, it is shown that the constitutive behavior for the
piezo-electric/magnetostrictive layers, coupled by a simple blocked-force approach, is likely to model the
behavior of magneto-electric composites.
This paper attempts to model the actuation and sensing behavior of polycrystalline magnetostrictive samples by
treating them as composed of multiple grains of single-crystals, each with a different orientation to the loading axis.
The texture analysis of a typical cross-section of the sample will be used to estimate the fraction of grains that are
close to <100>, <110> and <111> orientation. A simple model based on the law of mixtures will be proposed to
represent the behavior of the polycrystal in terms of the behavior of <100>, <110> and <111> oriented single
crystals. However, the magnetomechanical behavior along each of the crystallographic directions will be simulated
using an energy based model as discussed in Ref. 5 and Ref. 9
Iron-Gallium alloys demonstrate moderate magnetostriction (~350 ppm) and saturation material induction (~1 T) under low magnetic fields (~400 Oe) as well as high tensile strength (~500 MPa) and limited dependence of magnetomechanical properties on temperatures between -20°C and 80°C, making them promising materials for sensing and actuation applications. However, the mechanical and magnetic properties of these materials vary significantly with the percentage of gallium, which motivates this study on the effect of stoichiometry on the behavior of Fe-Ga alloys. Major loop compressive tests (loading to 110 MPa and unloading, at magnetic fields ranging from 0 to 891 Oe) were performed on single crystal 19% Ga and 24% Ga samples with longitudinal axis in the [100] direction. The effect of % Ga on Young's modulus, saturation magnetization (Msat), ΔE-effect and d*33 are discussed and explained. Furthermore, it was found that the magnetic field (H) through the sample changed with applied stress. A simple magnetic circuit analysis is developed in the latter part of the paper to model this effect. The ramification of both stoichiometry effects and variation in field on the design of Fe-Ga sensors is discussed.
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