Performance of IRFPA depends greatly on the amount and distribution of bad pixels. In this paper, general causes of bad
pixel in IRFPA are analyzed. Most bad pixels of IRFPA can be classified into four types for flip-chip bonding structure.
The amount of bad pixels in IRFPA often increases after long-term operation. This strongly affects application of IRFPA.
High temperature storage and temperature shock are effective ways to expose these potential bad pixels in advance. High
temperature storage and temperature shock are carried out on some IRFPA samples. Four kinds of variation for bad
pixels are investigated. They are variations of amount, characteristics, bad pixels on margin and bad pixels in different
IRFPA. Results show potential bad pixels damaged after these tests. New bad pixels are tested, analyzed and classified.
Each type of bad pixel is corresponding to defect of specified manufacture procedure. This indicates the potential
improving directions. Methods that could reduce bad pixels are briefly discussed. Results shown in this paper can help to
improve manufacture technology of IRFPA and then the performance of infrared imaging system.
I-V temperature characteristic is very important to InSb IRFPA. In order to make further studies on I-V temperature
characteristic, some experiments were done. In the experiments, the operating temperature of the InSb array was
gradually raised from 77k. It is shown that reverse current doesn't simply increase with the increase of the operating
temperature. The reason can be attributed to the composing of reverse currents at different operating temperature. In this
paper, the I-V characteristic of InSb diode at different operating temperature is briefly described. The dominant
components of reverse current and its temperature characteristic are discussed. The change of detector impedance is
analyzed as operating temperature is changed. At the same time, the optimized operating temperature of InSb IRFPA is
presented. The limit of operating temperature at which InSb IRFPA can work normally is also given.
Infrared Focal Plane Array (IRFPA) of InSb is designed to work under the condition of zero bias voltage or nearly to
zero bias voltage. InSb IRFPA can't work normally if PN junction is in the condition of high reverse bias voltage for
several minutes. In order to analyze the causation of the phenomena some experiments were designed to simulate the
condition of high reverse bias voltage. It is found that when the reverse bias voltage exceeds the limited value, the
responsibility of InSb detector becomes lower. The phenomena will not change unless the operating temperature is raised
to room temperature and kept for a long time. Response characteristic of InSb PN junction under high reverse bias
voltage is briefly described in this paper. The factors affecting response characteristic are discussed. The limited value of
the reverse voltage is given. The result is useful to design the driving circuit of InSb IPFPA. It also plays the guidance
part in application of InSb detector.
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