In the present work, BFO doped with Lanthanum has been synthesized by the Sol-Gel method. The wet chemical method is found suitable for the BFO synthesis as it is a low-temperature synthesis method and avoids evaporation of Bismuth from the BFO. The synthesized Bi1-xLaxFeO3 (x = 0.0, 0.10, 0.15, 0.20, 0.25, 0.30) samples have been characterized by X-ray diffraction for structural analysis. The electrical properties of samples have been observed by measuring the room temperature and temperature-dependent dc electrical resistivity, and activation energy. The XRD patterns reveal almost a single crystalline phase of all the samples with only a few traces of an additional phase of Bi2Fe4O9. The Lanthanum doped BFO is found to have a pseudo-cubic rhombohedral perovskite-type structure having space group R3c. The grain size calculated using the Scherrer formula is 27 nm for un-doped BFO and is found La-concentration dependent. The dc resistivity measurements reveal the semiconducting behavior of samples; resistivity increases on increasing the Laconcentration in BFO while decreases on increasing temperature. The La3+ ion which replaces Bi3+ in BFO stabilizes the perovskite structure by preventing Bi3+ loss due to volatilization and removes charge vacancies; thus improving the electrical properties of BFO.
Structural, dielectric and electrical properties of polycrystalline double perovskite oxides La2BMnO6 (Where B= Cr, Fe, Co, Ni, Cu, Zn) were prepared by auto combustion sol-gel method. The characterization of samples via X-ray reflects single phase in present series. X-ray diffraction pattern of all samples reveal monoclinic structure with space group P21/n except Cu which shows orthorhombic symmetry with Pbnm space group. The crystallite size (𝐷) was calculated by Scherrer formula and Williamson hall analysis. Frequency dependent dielectric properties measured at various temperatures. Dielectric constant (ε′) and loss tan δ decreases with frequency. AC conductivity (σac) increases as function of frequency shows semiconducting nature. I-V characteristic curve shows increase in current with rise in temperature. The DC resistivity (ρ𝑑𝑐) shows negative temperature coefficient behaviour. It is confirmed that results in case of copper and chromium fitted well by small polaron hopping (SPH) model and for cobalt variable range hopping (VRH) of small polaron was observed whereas for Zn, Ni and Fe follows variable range hopping model.
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