Several MWIR nBn HgCdTe devices grown on silicon were studied. While several parameters are varied in the study, the devices can most usefully be put into 2 groups: those with a type 3 HgTe/CdTe superlattice barrier and those simply with a wider bandgap alloy barrier. Other groups have shown the potential advantage of a super-lattice barrier. Many devices were grown and fabricated, and were run through several optical and electrical tests to evaluate their properties. Utilizing the finite volume method based semiconductor device modeling software Devsim, these devices were simulated to extract further material parameters.
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