CONFERENCE PROCEEDINGS
Advanced Search
Sergey S. Pushkarev
at Institute of UHF Semiconductor Electronics
SPIE Involvement:
Author
Publications (1)
Proceedings Article | 3 January 2013 Paper
Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs
S. Pushkarev, G. Galiev, E. Klimov, D. Lavrukhin, I. Vasil'evskii, R. Imamov, I. Subbotin, O. Zhigalina, V. Zhigalina, P. Buffat, B. Dwir, E. Suvorova
Proceedings Volume 8700, 870007 (2013) https://doi.org/10.1117/12.2017272
KEYWORDS: Superlattices, Transmission electron microscopy, Gallium arsenide, Heterojunctions, Surface roughness, Atomic force microscopy, Stereolithography, Semiconductors, Quantum wells, Indium gallium arsenide
SIGN IN TO:
  • View contact details
UPDATE YOUR PROFILE
Is this your profile? Update it now.
Sign into your SPIE.org account
Don’t have a profile and want one?
Create an account on SPIE.org
Advertisement
Advertisement
Back to Top