In this paper, deep-level transient spectroscopy (DLTS) techniques are used to study the defects presented in InxGa1-xAs/InP PIN photodetectors. For the lattice matched InxGa1-xAs /InP devices with x=0.53, the only electron trap located near the middle of the band gap is observed. A study of the influence of the bias voltage variation on DLTS signal for electron trap illustrates that this trap are uniformly distributed in the volume of InxGa1-xAs material. On the other hand, for the lattice mismatch InxGa1-xAs /InP devices, the additional hole defect located in the lower side of the middle gap is observed and this concentration increased with the depletion width. It is considered that these traps are related to the lattice mismatch and could be contributed to the large dark currents in the extended wavelength InxGa1-xAs photodetectors.
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