Effects of spatial inhomogeneity for the probability current density jx (x,z) (or a quantum-mechanical current density
ejx (x,z), e is the electron charge) in the semiconductor 1D nanostructures in the form of joints in the direction of
propagation of the electron wave (the x-axis) of narrow rectangular and wide parabolic (on the z-axis) quantum wires
(QWRs) (z-axis is the axis of the quantization) have been theoretically studied. It is assumed that such structures in the
2D electron system is realized. The inhomogeneous distribution of the jx (x,z) arises because of the interference of
electron waves spreading in the wide QWR simultaneously in different quantum-confined electron subbands. Special
attention is given to effects of spatial reproduction for electron waves in such nanostructures. It is shown that transverse
distribution jx (0,z) existing at the entry of the wide QWR is reproduced with some accuracy at a definite distance Χ1
from the joint. This picture is reproduced periodically in cross-sections Χq = qΧ1 (coefficients q are integers). The results
of numerical calculations of this effect in symmetric structure and its modification in asymmetric (on the z-axis)
nanostructure are given. It is shown, in particular, that in asymmetric structures the inverse behavior of probability of the
detection of a particle in the quantum-confined subband of the wide QWR from the number of the subband is probable.
Within the framework of previously proposed the spectral-correlative method investigation of the semiconductor structures with laterally nonuniform layers the photoluminescence (PL) of the structure on basis GaAs with n-type d-layers at 77 K is investigated. This method has allowed to study on one sample the dependence of the features of observed multicomponent spectrum PL from a variation of two parameters - distances between d-layers and composition of the narrow quantum well InGaAs taking place between them. The obtained results allow to link observed exponential increase of the intensity PL from the area of the d-layers at change these parameters with change of a ratio of the lateral located in minima of the fluctuation potential and free two-dimensional holes. The effect of the stabilization of the energetic position of PL spectral lines which we associate to the localization of the holes in a potential well between d-layers was found out. The received experimental results coordinated with the numerical calculations carried out in our work.
Effects of spatial nonhomogeneity for the probability current density jx (x,z) (or a quantum-mechanical current density ejx (x,z), e is the electron charge) in the semiconductor 2D nanostructures in the form of joints in the direction of propagation of the electron wave (the x-axis) of narrow and wide (on the z-axis) rectangular quantum wells (QWs) (z-axis is the axis of the quantization) and the possibility to control these effects have been theoretically studied. In the first part of our article we show that the nonhomogeneous distribution of the jx (x,z) arises because ofthe interference of electron waves spreading in the wide QW simultaneously in different electron subbands. Special attention is given to effects of spatial reproduction and multiplication for electron waves in such nanostructures. It is shown that transverse distribution jx (0,z) existing at the entry of the wide QW is reproduced with some accuracy at a definite distance X1 from the joint and splits in symmetric (along the z-axis) 2D nanostructures into p identical profiles of the intensity lower by p times at the distance X1/p. This picture is reproduced periodically in cross-sections Xq = qX1 (q and p are integers). The results of numerical calculations of these effects in symmetric nanostructures are given. The possibility to control these effects by the transverse (along z -axis) constant electric field strength F being created by gates in the wide QW in symmetric 2D nanostructures with rectangular QWs was studied theoretically.
Effects of spatial inhomogeneity for the probability current density jx (x, z) (or a quantum-mechanical current density ejx (x, z) e is the electron charge) in the semiconductor 1D nanostructures in the form of joints in the direction of propagation of the electron wave (the x-axis) of narrow and wide (on the z-axis) rectangular quantum wires (QWs) (z-axis is the axis of the quantization) have been theoretically studied. The inhomogeneous distribution of the jx (x, z) arises because of the interference of electron waves spreading in the wide QW simultaneously in different electron subbands. Special attention is given to effects of spatial reproduction and multiplication for electron waves in such nanostructures. It is shown that transverse distribution jx (0, z) existing at the entry of the wide QW is reproduced with some accuracy at a definite distance X1 from the joint and splits in symmetric (along the z-axis) 1D nanostructures into p identical profiles of the intensity lower by p times at the distance X1/p. This picture is reproduced periodically in cross-sections Xq = qX1 (q and p are integers). The results of numerical calculations of these effects in symmetric structures and their modification in asymmetric (on the z-axis) nanostructures are given.
As is well known, lateral superlattices on semiconductor vicinal planes are realized in 2D electron systems on high-index Miller surfaces. In this work we suggest a new method of development of vicinal superlattices in quantum wires on semiconductor low-index surfaces. For this purpose we suggest to orient the axis of the wire at the necessary angles to the basic translation vectors on a low-index surface (for instance, in the MOS system with the use of a narrow gate). In this case in the quantum wire the new basic translation period along the axis of the wire A< < a0 (ao - lauice constant) appears. Keywords: quantum wire, vicinal superlattice, low-index surface, energetic spectrum, nünigaps.
Electronic interference effects in the ballistic conductivity of 1-D and 2-D quantua structures •ith two-diaensional nonunifora potential relief created by the lateral controlling electrode are theoretically investigated It is shown that in such structures one can create quasi-localized electronic states, this results in appearance of sharP. singularities in dependencies of the structure transaission coefficient ITl 2 on particle energy and controlling field.
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